简介:Apeer-to-peer(P2P)networkisadistributedapplicationarchitecturewhichprovidesmanyattractivefeatures,suchasavailability,self-organization,load-balancing,andanonymity.However,P2Pnetworkhascreatedsignificantproblemstonetworkoperatorsbygeneratinglargevolumesofinterautonomoussystem(inter-AS)traffic.FocusingontheBitTorrentswarmingprotocol,thispaperproposesanapproachwhichaimstoreduceP2Pgeneratedinter-AStraffic.Inparticular,theapproachcanreduceinter-AStrafficby50%to70%.Moreover,itcanimprovethedownloadingspeedby60%forthepopulartorrents.Theevaluationshowsthatcontrolledregional-basedcontentsreplicationcaneffectivelyachievethisgoal.Furthermore,theapproachisincrementallydeployable.NetworkregionsinwhichthesystemgetsdeployedcansolvetheirP2Pgeneratedinter-AStrafficproblemsautonomously,i.e.,withoutanyInternetserviceproviders-collaborationandanyrequirement,thesystemcanbedeployedintheentireInternet.
简介:Inexperimentalstudyofthetindioxidegassensor,insitusheetconductivitywasmeasuredwithultrahighvacuumfourpointresistivityprobe.Surfacecompositionandstoi-chiometryweredetectedusingXPS.FourseparatestructurephaseswereobtainedbyLEEDatdifferentannealingtemperature,andemissionwasobservedthroughoutthebandgapuptotheFermilevelwithUPS.Furthermore,effectsofannealingtemperatureanddosedoxygenpressureonthesurfacereconstruction,O/Snratio,sheetconductivity,variationoftheworkfunctionandbandbendinghavebeenalsoinvestigated.Theresultshelpustorevealtherelationshipsbetweentheelectronicandelectricalpropertiesofthematerialanditsnativedefectsstructure.Itises-peciallyusefultoprovideamorecompleteunderstandingofthebasicoperationmechanismsforsuchsensingmaterials.
简介:WereportthedepositionofNb2O5filmsonunheatedBK-7glasssubstratesusingremoteplasmasputteringsystem.Theremoteplasmageometryallowspseudoseparationofplasmaandtargetbiasparameters,whichofferscompletedepositionratecontrol.Usingappropriateoxygenflowrates,high-densityandlow-lossNb2O5filmsaredepositedwithratesupto0.49nm/s.Lowerdepositionrates(~0.026nm/s)canalsobeobtainedbyworkingatlowtargetcurrentandvoltageandatlowpressure.Nb2O5filmsdepositedatdifferentrateshavetherefractiveindexofabout2.3andtheextinctioncoefficientaslowas6.9×10-5.
简介:Thestructureoftheopticalwaveguideof2-bitelectroopticA/Dconverterwithproton-exchangemicroprismsisoptimizedbythefinite-differencebeampropagationmethod(FD-BPM).Theelectrodeparametersoftheconverterareoptimizedbyconformalmapping.Theoptimalparametersareahalf-wavevoltageofVπ=4.5VandabandwidthofΔf=1.4GHz.Anormalizedtransmittedpowerof69.75%isobtainedbyFD-BMPandtheoutputwaveguidegapis300μm.
简介:ThepreparationofPT/PEK-cfilmsisreportedaswellastheirdielectricandopticalproperties.Thec-axisorientationratioofthefilmsis68%.Dielectricconstantandlossfactorat10kHzisabout4.023F/mand0.003,respectively.Therefractiveindicesofthefilms,neandno,are1.6573and1.6278at0.63μmwavelength,respectively.Theopticalband-gapofthefilmwithathicknessof2.33μmisfoundtobe3.06eV
简介:A2D-directionofarrivalestimation(DOAE)formultiinputandmulti-output(MIMO)radarusingimprovedmultipletemporal-spatialsubspacesinestimatingsignalparametersviarotationalinvariancetechniquesmethod(TS-ESPRIT)isintroduced.InordertorealizetheimprovedTS-ESPRIT,theproposedalgorithmdividestheplanararrayintomultipleuniformsub-planararrayswithcommonreferencepointtogetaunifiedphaseshiftsmeasurementpointforallsub-arrays.TheTS-ESPRITisappliedtoeachsub-arrayseparately,andinthesametimewiththeotherstorealizetheparallellytemporalandspatialprocessing,sothatitreducesthenon-linearityeffectofmodelanddecreasesthecomputationaltime.Then,thetimedifferenceofarrival(TDOA)techniqueisappliedtocombinethemultiplesub-arraysinordertoformtheimprovedTS-ESPRIT.Itisfoundthattheproposedmethodachieveshighaccuracyatalowsignaltonoiseratio(SNR)withlowcomputationalcomplexity,leadingtoenhancementoftheestimatorsperformance.
简介:Anultra-highspeed1:2demultiplexerforopticalfibercommunicationsystemsisdesignedutilizingtheIHP0.25μmSiGeBiCMOStechnology.Thelatchofthedemultiplexercorecircuitisresearched.Basedonthecurrentmeasurementcondition,ahigh-gainandwide-bandwidthclockbufferisdesignedtodrivelargeload.Transmissionlinetheoryforultra-highspeedcircuitsisusedtodesignmatchingnetworktosolvethematchingproblemamongtheinput,outputandinternalsignals.Thetransientanalysisshowsthatthisdemultiplexercandemultiplexone100Gb/sinputintotwo50Gb/soutputs.Thechipareaofitis0.7mm×0.47mm,theinputandoutputdataarebothat400mVP-PPCMLstandardvoltagelevel,andthepowerconsumptionoftheICis900mWatthepowersupplyof-4V.
简介:Aterahertz(THz)polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide(VO2).WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.
简介:AninitialstructuredesignofMMI1×8opticalpowersplittersisreported.ThewaveguidematerialisSi-basedSiO2Ge-dopedanddepositedbyPECVDmethod.Embeddedstripstructureisimpliedinthesectiondesign.ByusingBPM-CAD,afavorableresultisobtainedthatthisdevicehasasounduniformityandfairlylowloss.Meanwhile,simulationsofdesignswithcertainchangedparametersisalsoimplementedforabetterdesignconfiguration.
简介:UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.