Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors-中国期刊网

摘要 Strontium-zinc-oxide(SrZnO)filmsformingthesemiconductorlayersofthin-filmtransistors(TFTs)aredepositedbyusingion-assistedelectronbeamevaporation.Usingstrontium-oxide-dopedsemiconductors,theoff-statecurrentcanbedramaticallyreducedbythreeordersofmagnitude.Thisdramaticimprovementisattributedtotheincorporationofstrontium,whichsuppressescarriergeneration,therebyimprovingtheTFT.Additionally,thepresenceofstrontiuminhibitstheformationofzincoxide(ZnO)withthehexagonalwurtzitephaseandpermitstheformationofanunusualphaseofZnO,thussignificantlychangingthesurfacemorphologyofZnOandeffectivelyreducingthetrapdensityofthechannel.

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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

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