High-Power Electroabsorption Modulator Using Intrastep Quantum Well-中国期刊网

摘要用intrastep量的一个电镀物品吸收调节的人(IQW)很好，活跃区域为光网络系统被制作。补偿紧张的InGaAsP/InGaAsPIQW显示出好材料质量和改进调整性质，高扑灭比率elliciency10dB/Vand低电容(<0.42pF)，与哪个极端高频率(>15GHz)能被获得。在高力量的刺激下面的高速度的测量不显示出力量浸透直到21dBm的刺激力量。到我们的知识，光力量是的输入没有热水池，最高为多量井电动会计记帐机报导了。

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High-Power Electroabsorption Modulator Using Intrastep Quantum Well

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High-Power Electroabsorption Modulator Using Intrastep Quantum Well

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