Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology-中国期刊网

摘要 AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.

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Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology

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Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology

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