简介：TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.
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