简介：Thecharacteristicsoflow-frequencyelectricalnoise,voltage-current(V-I)andelectricalderivationfor980nmInGaAsP/InGaAs/GaAshighpowerdoublequantumwelllasers(DQWLs)aremeasuredunderdifferentconditions.Thecorrelationofthelow-frequencyelectricalnoisewithsurfacenon-radiativecurrentofdevicesisdiscussed.Theresultsindicatethelow-frequencyelectricalnoiseof980nmDQWLswithhighpowerismainly1/fnoiseandhasgoodrelationwiththedevicesurfacecurrentatlowinjection.
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