简介：Inthisstudy,weinvestigatetheinfluenceofdopingonthechargetransferanddevicecharacteristicsparametersinthebulkheterojunctionsolarcellsbasedonpoly(3-hexylthiophene)(P3HT)andamethanofuUerenederivative(PCBM).Organicsemiconductorsarealsoknowntobenotpureandtheyhavedefectsandimpurities,someofthemarebeingchargedandactasp-typeorn-typedopants.Calculationsofthesolarcellcharacteristicsparametersversusthep-dopinglevelhavebeendoneatthreedifferentn-dopings(N_d)thatconsistof5×10~(17)cm~(-3),10~(18)cm~(-3),and5×10~(18)cm~(-3).Weperformtheanalysisofthedopingconcentrationthroughthedrift-diffusionmodel,andcalculatethecurrentandvoltagedopingdependency.Wefindthatatthreedifferentn-dopantlevels,optimump-typedopingisaboutN_p=6×10~(18)cm~(-3).Simulationresultshaveshownthatbyincreasingdopinglevel,V_(oc)monotonicallyincreasesbydoping.CellefficiencyreachesitsmaximumatsomewhathigherdopingasFFhasitspeakatN_p=3×10~(18)cm~(-3).Moreover,thispaperdemonstratesthattheoptimumvalueforthep-dopingisaboutN_p=6×10~(18)cm~(-3)andoptimumvalueforn-dopantisN_d=10~(18)cm~(-3),respectively.Thesimulatedresultsconfirmthatdopingconsiderablyaffectstheperformanceoforganicsolarcells.