简介：ThewholechemicaletchingprocessonaP-typepolycrystallinesiliconsubstratewithresistivity1-2Ω·cmisdescribed.Theformationmechanismofporouspolycrystallinesilicon(PPS)microstructurewasinvestigated.ThosehowtheinitialpitswereformedandanuniformmorphologyofPPSwasobtainedareexplained.Twotypesofetchingmechanismwerecharacterizedasdefectcontrolreactionanddiffusioncontrolreaction.ThemorphologyformedaftertheisotropicacidicsolutionetchingwithdifferentetchingtimeandHF/HNO3concentrationwascomparedwiththeeffectofthesameetchingprocessafteranisotropicalkalineetching.Thestudyshowedthatthethicknessofporouspolycrystallinesiliconlayerwithchemicalacidicetchingentirelydependedontheexistenceofvarioustypesofdefects.
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