简介：Wepresentanequivalentcircuitmodelforasiliconcarrier-depletionsingle-drivepush–pullMach–Zehndermodulator(MZM)withitstravelingwaveelectrodemadeofcoplanarstriplines.Inparticular,thepartialcapacitancetechniqueandconformalmappingareusedtoderivethecapacitanceassociatedwitheachlayer.ThePNjunctionisaccuratelymodeledwiththefringecapacitancestakenintoconsideration.Thecircuitmodelisvalidatedbycomparingthecalculationswiththesimulationresults.Usingthismodel,weanalyzetheeffectofseveralkeyparametersonthemodulatorperformancetooptimizethedesign.ExperimentalresultsofMZMsconfirmthetheoreticalanalysis.A56Gb/son–offkeyingmodulationanda40Gb/sbinaryphase-shiftkeyingmodulationareachievedusingtheoptimizedmodulator.
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