简介：Cu2ZnSnS4(CZTS)粉末被使用ZnS和Cu2没有任何中介，原料直接在450愠?浥瑰?瑳浯d分阶段执行的SnS3

简介：Cu-andCo-substitutedNiZnferritethinfilms,Ni0.4-xZn0.6CuxFe2O4andNi0.5Zn0.5CoxFe2-xO4(0≤x≤0.2),aresynthesizedbysol-gelprocess.ThecrystallographicandmagneticpropertiesofCu-andCo-substitutedNiZnferritethinfilmshavebeeninvestigated.ThelatticeparameterdecreaseswithCusubstitutionandincreaseswithCosubstitution.ThesaturationmagnetizationdecreasesandthecoercivityincreaseswiththeincreaseofCusubstitution.Moreover,thesaturationmagnetizationgraduallyincreaseswiththeincreaseofCosubstitutionwhenx≤0.10,butdecreaseswhenx>0.10.Meanwhile,thecoercivityinitiallydecreaseswiththeincreaseofCosubstitutionwhenx≤0.10,butincreaseswhenx>0.10.

简介：Cr-dopedZnOthinfilmsarepreparedonglasssubstratesbythemagnetronsputteringtechnique.AnX-raydiffraction(XRD)isusedtoanalyzethestructuralpropertiesofthethinfilms.Itindicatesthatallthethinfilmshaveapreferentialc-axisorientation.Thepeakpositionofthe(002)planeshiftstothehigher2θvalue,andthepeakintensitydecreaseswiththeincreaseofCrdoping.Theresultsofthescanningelectronmicroscopy(SEM)showthatthesurfacemorphologybecomesloosewiththeincreaseofCrdoping.Besides,itisfoundfromthephotoluminescence(PL)measurementatroomtemperaturethattheultravioletemissionpeakandgreenemissionbandarelocatedat375nmand520nm,respectively,andbothintensitiesofthemdecreasewiththeincreaseoftheCrdopingconcentration,whilethebandgapoftheultravioletemissionshiftstothelowerwavelength.TheexperimentalresultsconfirmthattheoptimalCrdopingconcentrationis2at.%.

简介：Theultraviolet(UV)bandedgephotorefractivityofLiNbO_3:Zrat325nmhasbeeninvestigated.Theexperimentalresultsshowthattheresistanceagainstphotorefractionat325nmisquiteobviousbutnotasstrongasthatat351nm,whenthedopingconcentrationofZrreaches2.0mol%.ItisreportedthatthephotorefractivityinothertetravalentlydopedLiNbO_3crystals,suchasLiNbO_3:HfandLiNbO_3:Sn,isenhanceddramaticallywithdopingconcentrationoverthreshold.HerewegiveanexplicitexplanationonsuchseemlyconflictingbehaviorsoftetravalentlydopedLiNbO_3,whichisascribedtothecombinedeffectofincreasedphotoconductivityandtheabsorptionstrengthofthebandedgephotorefractivecenters.

简介：采用挤压铸造方法制备了体积分数为55%、不同颗粒粒径增强的电子封装用SiCp/Cu复合材料,并分析了颗粒尺寸和热处理状态对材料物理性能和力学性能的影响规律.显微组织观察表明SiC颗粒分布均匀,复合材料组织致密;随着SiC颗粒尺寸的减小,复合材料的平均线膨胀系数和热导率均降低;退火处理可以降低复合材料的热膨胀系数,同时提高材料的热导率.复合材料具有高的弯曲强度和弹性模量,退火处理后材料的弯曲强度降低,但弹性模量变化不大.

简介：综合分析了Sn-Cu-Ni系无铅钎料的国内外研究现状,概述了Sn-Cu-Ni系无铅钎料的润湿性、微观组织、界面反应、力学性能、焊点可靠性、物理性能等性能特点。从钎焊工艺、添加微量元素等方面阐述了Sn-Cu-Ni系钎料各项性能的影响因素,并对Sn-Cu-Ni系钎料的应用前景和研究方向进行了展望。

简介：UsingCu-phthalocyanine(CuPc),4,4'-diaminodiphenyletherandpyromelliticdianhydrideasmonomermaterials,polyimide(PI)thinfilmsdoped-CuPchavebeenpreparedontoglasssubstratebyvaporphaseco-depositionpolymerizationunderavacuumof2×10-3Paandthermalcuringofpolyamicacidfilminattemperatureof150-200Cfor60min.Inthisprocess,thepolymerizationcanbecarriedoutthroughcontrollingthestoichiometricratio,heatingtimeanddepositionratesofthethreemonomers.IRspectrumidentifiesthedesignedchemicalstructureofthepolymer.Theabsorptionofpolyimidedoped-CuPcisveryintenseinvis-rangeandnear-infraredbyUV-Visspectrum.And,thePIfilmsdoped-CuPcpolymerizedbyvaporphasedepositionhaveuniformity,finethermalstabilityandgoodnonlinearopticalproperties,andthethird-orderopticalnonlinearsusceptibilityx(2)withdegeneratefour-wavemixingcanbe1.984×10-9ESU.

简介：信令技术是自动交换光网络(ASO理(DCM)信令模型的基础上,详细地分析了CR-LDP信令协议在ASON的分布式呼叫和连接管理中的应用.

简介：WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.

简介：在转向无铅电子产品过程中，元件供应商可能需要支持无铅和合铅元件的双线生产。而这可能合在生产制造中引起广泛的后勤问题。全部使用无铅元件是这个问题的一个解决方法。因此，用锡铅共晶焊膏粘接的Sn-Ag—CuBGA元件的焊点可靠性需加讨论。在这篇论文中介绍了对两种无铅封装：超细间距BGA(VFBGA)和层叠式CSP(SCSP)的焊点可靠性评估结果，它们是应用锡铅共晶焊膏贴在PCB板上。而这些封装都是采用不同的回流曲线在标准的锡铅组装条件下组装的。采用合保温区或斜升区的热度曲线。回流峰值温度为208℃和222℃。组装后PCB(称为板级)进行温度循环(-40℃—125℃，每个循环30分钟)和落体实验。下面将会详细叙述失效分析。

简介：在电子产业无铅化的转折期。元件供应商也许要为区分无铅与含铅的不同元件而准备双重的生产线。这会给制造部门的后勤供应带来问题。当生产中实现全部的无铅化后，这一问题才可能解决。因此，研究Sn—Ag—CuBGA元件使用共晶Pb—Sn焊膏的焊点可靠性问题，在当前非常必要。本文提出了关于VFBGA（极细间距BGA）及SCSP（芯片级尺寸封装）无铅封装元件在印刷电路板（PCB）组装中使用共晶Pb—Sn焊膏的焊点可靠性评估。在标准的Pb—Sn组装环境下，使用了各种不同的回流曲线。峰值温度从208℃至222℃。回流曲线类型为浸润型曲线（SoakProfile）及帐篷型曲线（DirectRampUpProfile）。组装后的PCB板被选择进行了板级温度循环测试（-40℃至125℃，每30分钟循环一次）及跌落测试。失效细节分析同样会在本文提及。