简介:MonovalentionsLi+,Na+,andK+,aschargecompensators,areintroducedintoCaYAl3O7:M(M=Eu3+,Ce3+)inthisletter.TheircrystalphasesandphotoluminescencepropertiesofdifferentalkalimetalionsdopedinCaYAl3O7areinvestigated.Inaddition,theinfluenceofchargecompensationionLi+whichhasamoreobviousroleinimprovingluminescenceintensityonCaYAl3O7:Eu3+phosphorisintentionallydiscussedindetailandapossiblemechanismofchargecompensationisgiven.Theenhancementofredemissioncenteredat618nmbelongingtoEu3+isachievedbyaddingalkalimetalionLi+under393-nmexcitation.
简介:Weprovidethefirstdemonstrationofpureredemissioninthevisiblelightregionviathree-photonexcitationinmonodisperseNa_3ZrF_7:Ernanoparticles(NPs)byusingalaseroperatinginthetelecommunicationband.NPsof~22nmindiameteraresynthesizedat260°Cbythethermaldecompositionmethod.TheexperimentalresultsrevealthattheNa_3ZrF_7:ErNPsexhibitpureredemissioninthevisibleregionunder1480nmlaserexcitation,andtheemissionintensityissignificantlyinfluencedbytheEr~(3+)ionconcentration.Thedecaytimesofthe~4S_(3∕2)→~4F_(15∕2)and~4F_(9∕2)→~4F_(15∕2)transitionsoftheEr~(3+)ionsat540and655nm,respectively,arereducedbyincreasingtheEr~(3+)ionconcentrationintheNa_3ZrF_7:ErNPs.Thesuppressedemissionintensityresultfromthedefect-relatedquenchingeffect:whentrivalentEr~(3+)ionsreplactetravalentZr~(4+)ions,extraNationsandFvacanciesareformedtore-balancethechargeintheNa_3ZrF_7matrix.TheemissioncoloroftheNa_3ZrF_7:ErNPsisrelatedtothecrossrelaxationbetweenEr~(3+)ions.Theseresultsprovideanimportantsteptowardmoreeffectivebiologicalimagingandphotodynamictherapybyminimizingthescatteringoftheexcitationlightandincreasingthepenetrationdepth.
简介:Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.
简介:WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.
简介:Asecondgenerationsolaradaptiveoptics(AO)systemisbuiltandinstalledatthe1-mNewVacuumSolarTelescope(NVST)oftheFuxianSolarObservatory(FSO)in2015.TheAOhigh-ordercorrectionsystemconsistsofa151-elementdeformablemirror(DM),acorrelatingShack–Hartmann(SH)wavefrontsensor(WFS)witha3500Hzframerate,andareal-timecontroller.ThesystemsawfirstlightonMar.16,2015.Thesimultaneoushigh-resolutionphotosphereandchromosphereimageswithAOareobtained.Theon-skyobservationalresultsshowthatthecontrastandresolutionoftheimagesareapparentlyimprovedafterthewavefrontcorrectionbyAO.
简介:Anall-fiberopticallaserpulsemulti-passstretcherusingachirpedfiberBragggrating(CFBG)isdemonstrated.Pulsesfroma1053-nmmode-lockedfiberseedoscillatorarestretchedbymultiplepassingthroughachirpedfibergratingsetinafiberregenerativeamplifierstructure.Westretchthepulsefrom16psto1.855nsafterittransmitssevenloopsinthestretcher.Themainfactorsthataffectthestretchingresultsarediscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.