简介：ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.
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