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  • 简介:Thisworkinvestigatesinternalplasmaprocessparametersusingahairpinresonanceprobeandopticalemissionspectroscopy.ThedependenceofelectrondensityandatomicfluorineonthepercentageofoxygeninanSF6/O2dischargewasmeasuredusingthesemethods.AnRIEOxfordInstruments80pluschamberwasusedfortheexperiments.Twodifferentprocesspowers(100Wand300W)ataconstantpressure(100mTorr)wereused,anditwasfoundthattheopticalemissionintensityofthe703.7nmand685.6nmlinesofatomicfluorineincreasedrapidlyasoxygenwasaddedtotheSF6discharge,reachedtheirmaximumatanO2fractionof20%andthendecreasedwithfurtheradditionofoxygen.TheplasmaelectrondensitywasalsostronglyinfluencedbytheadditionofO2.

  • 标签: 等离子体发射 电子密度 光谱测量 蚀刻工艺 工艺参数 发射光谱
  • 简介:本文描述了GdB5O9、NaGdF4的合成与结构以及NaGdF4在高温下的相转变。粉末衍射数据表明GdB5O9属于四方晶系,其空间群为:I4l/acd,晶胞参数为:α=8.23813。c=33.6377。方和立方NaGdF4分别与NaEuF4和CaF2同构。本文还考察了GdB5O9:Eu、方NaGdF4:Eu、立方NaGdF4:Eu样品的真空紫外(VUV)荧光性质.上述三种样品中Gd3+的4f-5d跃迁及基质的吸收位于真空紫外波段。

  • 标签: 稀土硼酸盐 氟化物 结构 VUV荧光性质 粉末衍射 晶胞
  • 简介:本文通过对三聚氰胺(C3N6H6)的室温高压原位同步辐射能量散射x-ray衍射实验(EDXRD),在14.7GPa压力范围内,观察到常压下为单斜晶系的三聚氰胺经历了两次压致结构相变。在1.3GPa下,三聚氰胺分子晶体从单斜相转变为三斜相;在8.2GPa又转变为正交相。

  • 标签: 三聚氰胺 C3N6H6 压制结构 相变 EDXRD 单斜晶系
  • 简介:Anewtwo-dimensionalstructuremodulationalongc-andb-axeshasbeendiscoveredinsuperconductingsinglecrystalsofBi2.13Sr1.87CuO6+δ(Bi2201)byx-rayscattering.Suchmodulationstructuredoesnotexistinnon-superconductingBi2201singlecrystals.Butinsteadlatticedistortionsareobservedinthea-b-plane.Thisphenomenonmayindicatethatbothstrainrelaxationandchargemodulationinthea-b-planeareimportanttotheoccurrenceofsuperconductivityinthecopperoxides.

  • 标签: 超导体 调制结构 实验观测
  • 简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.

  • 标签: 等离子体化学 放电特性 蚀刻 薄膜 双频率 功率LED