简介:Thisworkinvestigatesinternalplasmaprocessparametersusingahairpinresonanceprobeandopticalemissionspectroscopy.ThedependenceofelectrondensityandatomicfluorineonthepercentageofoxygeninanSF6/O2dischargewasmeasuredusingthesemethods.AnRIEOxfordInstruments80pluschamberwasusedfortheexperiments.Twodifferentprocesspowers(100Wand300W)ataconstantpressure(100mTorr)wereused,anditwasfoundthattheopticalemissionintensityofthe703.7nmand685.6nmlinesofatomicfluorineincreasedrapidlyasoxygenwasaddedtotheSF6discharge,reachedtheirmaximumatanO2fractionof20%andthendecreasedwithfurtheradditionofoxygen.TheplasmaelectrondensitywasalsostronglyinfluencedbytheadditionofO2.
简介:Anewtwo-dimensionalstructuremodulationalongc-andb-axeshasbeendiscoveredinsuperconductingsinglecrystalsofBi2.13Sr1.87CuO6+δ(Bi2201)byx-rayscattering.Suchmodulationstructuredoesnotexistinnon-superconductingBi2201singlecrystals.Butinsteadlatticedistortionsareobservedinthea-b-plane.Thisphenomenonmayindicatethatbothstrainrelaxationandchargemodulationinthea-b-planeareimportanttotheoccurrenceofsuperconductivityinthecopperoxides.
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简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.