简介:ToobtainthermotolerantmutantsofG.oxydans,whichcanenhancethetransformationrateofL-sorboseto2-Keto-L-gulonate(2-KLG)at33℃inatwo-stepprocessofvitaminCmanufacture,ionbeamwasusedasamutationsource.GluconobacteroxydansGOandBacillusmegateriumB0wereusedinthisstudy.TheoriginalstrainGluconobacteroxydansGOwasmutatedbytheheavyionimplantationfacilityattheInstituteofPlasmaPhysics,ChineseAcademyofSciences.SeveralmutantsincludingGluconobacteroxydansGI13wereisolatedandcoculturedwithBacillusmegateriumB0at33℃inshakingflasks.TheaveragetransformationrateofthenewmixedstrainGI13-B0inpergram-moleculereached94.4%aftersevenpassagesinshakingflasks,whichwasincreasedby7%whencomparedwiththeoriginalmixedstrainG0-B0(GluconobacteroxydansG0andBacillusmegateriumB0).Moreover,thetransformationrateofI13B0wasstableat94%attemperaturesrangingfrom25℃to33℃,whichwouldbeofmuchvalueinreducingenergyconsumptioninthemanufactureofL-ascorbicacid,especiallyintheseasonofsummer.Toclarifysomemechanismofthemutation,thespecificactivitiesofL-sorbosedehydrogenaseinbothG0andGI13wereestimated.
简介:利用同步辐射(BSRF)漫散射站四圆衍射仪,对SiC体单晶的结构进行了判定以及对利用常压化学气相沉积(APCVD)生长的3C-SiC/Si(001)中的孪晶及含量进行了分析。六方{10-15}极图证明了该SiC单晶为6H(H为Hexagonal的缩写)结构。对3C-SiC外延薄膜,Φ扫描证明了3C-SiC外延生长于Si衬底上,外延取向关系为:(001)3C-SiC//(001)Si,[111]3C-SiC//[111]Si。3C-SiC的{111}极图在x=15.8°出现了新的衍射,采用六方{10-10}极图以及基体倒格点111、孪晶倒格点002的Mapping分析了x=15.8°处产生的衍射为3C-SiC孪晶所致,并利用ω扫描估算了孪晶的含量约为1%。