简介：TheDCcharacteristicsofSiGeHBTirradiatedatdifferentelectrondosehavebeenstudiedinacomparisonwiththoseofSiBJT.Generally,IbandIb-Ib0increase,Ic,Ic-Ic0andits+/-transitionVbeaswellasDCcurrentgainβdecreaseswithincreasingdose;increaseofIb-Ib0withincreasingdoseforSiBJTismuchlargerthanthatforSiGeHBT;βincreaseswithVbeorIb,butdecreasesatIb＜0.25mAwithIb,andcongregatesathigherdose;andadamagefactord(β)ismuchlessatthesamedoseforSiGeHBTthanforSiBJT.SiGeHBThasmuchbetteranti-radiationperformancethanSiBJT.SomeanomalousphenomenaforincreaseofIc,Ic-Ic0,Ib-Ib0andβatlowdosehavebeenfound.Someelectrontrapshavebeenmeasured.Themechanismofchangesofcharacteristicsisdiscussed.

简介：Constrainedgroovepressing(CGP)isanewsevereplasticdeformationmethodsuitableforproducingultra-finegrainedsheetmetals.Inthiswork,theprocessingefficiencyforamuti-passCGPofpurecopperwasinvestigated.Witharelativelysmallgroovewidthof2mmandtightconstraint,asharpvariationofmechanicalpropertieswithpassnumberisobserved.Subgrainswiththesizeof*0.5lmhavedistinctboundaries,whichisthepredominantfeatureinthemicrostructureafterthreepasses.Theevolutionofdeformationhomogeneitycharacterizedbymicro-hardnessdistributionwasexaminedindetail.Observationsofopticalmicrographsandfracturesurfacemorphologyconfirmtheevolutionrule.Therelationbetweenelectricalresistivityandaccumulativeplasticstrainwasdiscussed.Crystallinedefects,micro-cracks,andmicrostructureuniformitytogetherdeterminethechangeofelectricalresistivityofCGPcopper.

简介：TiO2/Au/TiO2多层的薄电影用dc(直接水流)在房间温度在聚合物底层被扔磁控管劈啪作响方法。由改变每层的厚度，TiO2/Au/TiO2多层的电影的光、电的性质能被定制适合不同应用。厚度和Au层的光性质和Au绝缘的接口的质量为Au绝缘的多层的薄电影的电、光的表演是批评的。在8nm的厚度，Au层形成有最低抵抗力和它的连续结构一定为高发射度薄。多层的栈能被优化有6的一个表电阻?在在在波长的680nm的超过80%的发射度的/sq.。当时，山峰发射度向长波长区域变二TiO2的厚度(上面、更低)层增加。当二部TiO2电影的电影厚度是45nm时，高发射度价值为全部可见轻波长区域被获得。

简介：Auniformtransienttemperaturefieldmodelofelectricalcontactsoperationwasfoundbyanalyzingtheprocessofclosingarc→constrictionresistanceJouleheat→breakingarc.EssentialparametersofAg/La2NiO4electricalcontactmaterialfortransienttemperaturefieldcalculationwereobtainedthroughtestsofelectricalcontactexperimentalinstrumentunder18VDCindifferentcurrents,othercorrelationexperiments,andcalculationanalysis.Thefiniteelementmethodwasappliedtosolvethetransienttemperaturefield,andthefeaturesanddistributionofthetransienttemperaturefieldwereobtained.Theconditionofmaterialerosionandmasstransfercanbeforecastedbythosecalculationresults.ItisbeneficialtoresearchaboutthelifetimeofAg/La2NiO4electricalmaterial.

简介：TherelationshipofelectricalpropertiesofMn-dopedBa0.92Ca0.08TiO3PTCR(positivetemperaturecoefficientresistance)ceramicswithtwosinteringscheduleswasdiscussed.UsingTEM(transmissionelectronmicroscope)combinedwithEDS(energydispersiveX-rayspectrometer),theMnionsdistributedatgrainboundarieswereanalyzed.TheresultsshowthatthePTCReffectofMn-dopedPTCRceramicsismoredependentonthesinteringschedulethanthoseofMnfree.ThephenomenonmaybecausedbythevalencestatesvarianceofMnionssegregatedatthegrainboundaries.