简介：Manyapplicationsofultrasonic-assistedmethodswereusedduringmetalsolidification,buttheycouldnotbeintroducedintoweldpool.Inthispaper,awayofultrasonicassistedTIGweldingisintroduced.Bydirectlyimposedultrasonicvibrationonweldingarc,thevibrationinteractswitharcplasmaandpassestotheweldpool.Measurementresultsshowthatarcpressureissignificantlyincreasedwiththeultrasonicvibrationandthearcpressuredistributionmodelsarechanged.Bead-on-plateweldingtestsonSUS304confirmthatthistechnologycaninfluencethestyleofmetalmeltingandincreaseweldpenetrationdepth.

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简介：Theapplicationofmicrowavetechniqueinthehydrometallurgyofnickellateriteoreswasdescribed.Themixtureofnickellateriteoresandsulfuricacidwaspre-treatedbymicrowaveirradiation.Thedissolvingofnickelwasconductedinhotwaterattheatmosphericpressure.Theeffectsoffactors,suchasmicrowavepower,microwaveirradiationtime,andsulfuricaciddosage,wereinvestigated.Inmicrowavefield,themigrationofionicspeciesand/orrotationofdipolarspeciespromotetheliquid?solidreactionprocessduetotheincreasedcontactareaofreactantsandleachingreactionrateconstant.Thankstothestrengtheningactionofmicrowave,themicrowave-assistedleachingprocesshasitsadvantages,suchashigherextractingratethanconventionalatmosphericleaching,andnoneedforhigh-pressureoperationashighpressureacidleaching(HPAL).Theferricironinleachingsolutioncouldbeeffectivelyremovedbysodiumjarositeprocesswithalittlelossofnickelinthejarositeprecipitate.

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简介：InorganicbufferlayerssuchasSiO2orTiO2andtransparentconductiveindium-tin-oxide(ITO)filmswerepreparedonpolyethyleneterephthalate(PET)substratesbyionassisteddeposition(IAD)atroomtemperature,andtheeffectsofSiO2andTiO2onthebendingresistanceperformanceofflexibleITOfilmswereinvestigated.TheresultsshowthatITOfilmswithSiO2orTiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithoutthebufferlayerwhentheITOfilmsareinwardsbentatabendingradiusmorethan1.2cmandwhentheITOfilmsareoutwardsbentatabendingradiusfrom0.8cmto1.2cm.ITOfilmswithSiO2bufferlayerhavebetterresistancestabilitiescomparedtooneswithTiO2bufferlayeraftertheITOfilmsarebentseveralhundredsofcyclesatthesamebendingradius,fortheadhesionofSiO2isstrongerthanthatofTiO2.ThecompressivestressresultedfrominwardbendingleadstotheformationofmoredefectsintheITOfilmscomparedwiththetensilestressarisingfromoutwardbending.SiO2andTiO2bufferlayerscaneffectivelyimprovethecrystallinityofITOfilmsin(400),(440)directions.