简介：研究了钙钛矿太阳能电池材料CH3NH3PbI3（CH3NH3=MA,MAPbI3）的输运特性,理论分析了有机分子MA对晶格结构的影响。发现：MA沿[110]方向排布且近邻MA分子相互垂直的构型最稳定,将此构型作为MAPbI3的标准结构,使用第一性原理方法,通过分析晶格的振动散射或声子散射,计算了MAPbI3材料中形变势散射主导的载流子迁移率,分析了材料的输运特性,讨论了载流子迁移率理论计算值和实验值之间的差异。

简介：Temperature-dependentphotoluminescencecharacteristicsoforganic-inorganichalideperovskiteCH3NH3PbI3-xClxfilmspreparedusingatwo-stepmethodonZnO/FTOsubstrateswereinvestigated.Surfacemorphologyandabsorptioncharacteristicsofthefilmswerealsostudied.Scanningelectronmicroscopyrevealedlargecrystalsandsubstratecoverage.Theorthorhombic-to-tetragonalphasetransitiontemperaturewas140K.Thefilms’excitonbindingenergywas77.6±10.9meVandtheenergyofopticalphononswas38.8±2.5meV.TheseresultssuggestthatperovskiteCH3NH3PbI3-xClxfilmshaveexcellentoptoelectroniccharacteristicswhichfurthersuggeststheirpotentialusageinperovskitebasedoptoelectronicdevices.

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简介：让b(n)表示n的立方的分区对的数字。在这份报纸，我们试图提供策略获得b(n)的算术性质。这把肯定答案给二Lins推测。

简介：建立了柱前衍生反相高效液相色谱法测定山黧豆中β-ODAP含量的方法。采用luna-C18色谱柱（4.6mm×250mm,5μm）,以乙腈和HAc-NaAc为混合流动相（17∶83）,λ=360nm,柱温40℃,取20μL进样分析。β-ODAP标准品在0.007-1.000mg/mL范围内线性关系良好,y=5164x＋167.74,R=0.9939,相对标准偏差（RSD）为1.6%,山黧豆不同部位（种子、根、茎、叶）中β-ODAP含量最高的为种子。方法操作简便、快速、准确,可用于植物样品中β-ODAP含量的测定。

简介：9to12,April,2018Suzhou,ChinaInternationalSymposiumseriesonHighPowerLaserScienceandEngineering,aimingatbringingtogetherworldwidescientistsandengineersworkingonhighpowerlaserandphysics,isheldeverytwoyearssince2014.Onbehalfofthe3rdInternationalSymposiumonHighPowerLaserScienceandEngineering(HPLSE2018),

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简介：Becausemostpiezoelectricdeviceshaveinterfaceswithfluidinengineering,itisvaluabletostudythecoupledfieldbetweenfluidandpiezoelectricmedia.Asthefundamentalproblem,the3DGreen'sfunctionsforpointforcesandpointchargeloadedinthefluidandpiezoelectricbimaterialsarestudiedinthispaper.Basedonthe3Dgeneralsolutionsexpressedbyharmonicfunctions,weconstructedthesuitableharmonicfunctionswithundeterminedconstantsatfirst.Then,thecouplefieldinthefluidandpiezoelectricbimaterialscanbederivedbysubstitutionofharmonicfunctionsintogeneralsolutions.Theseconstantscanbeobtainedbyvirtueofthecompatibility,boundary,andequilibriumconditions.Atlast,thecharacteristicsoftheelectromechanicalcoupledfieldsareshownbynumericalresults.

简介：ZnOfilmscontainingErandGenanocrystals（nc-Ge）weresynthesizedandtheirphotoluminescence（PL）propertieswerestudied.Visibleandnear-infraredPLintensitiesarefoundtobegreatlyincreasedinnc-Ge-containingfilm.Er-related1.54μmemissionhasbeeninvestigatedunderseveralexcitationconditionsupondifferentkindsofGe,ErcodopedZnOthinfilms.1.54μmPLenhancementaccompaniedbytheappearanceofnc-Geimpliesasignificantcorrelationbetweennc-GeandPLemissionofEr3+.Theincreasedintensityof1.54μminGe:Er:ZnOfilmisconsideredtocomefromthejointeffectofthelocalpotentialdistortionaroundEr3+andthepossibleenergytransferfromnc-GetoEr3+.

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简介：针对DC/DC的质子位移效应,选取具有抗TID能力的DC/DC器件作为试验样品,在3MeV质子辐照条件下获取了器件的失效位移损伤剂量.结果表明,DC/DC功能失效是PWM控制器输出异常导致的.通过等效^60Coγ辐照及退火试验,排除了TID效应的影响,确定器件功能失效是由位移损伤引起的.高温退火后器件功能恢复,并立即对该器件进行了测试.结果表明,输出电压、电压调整度、负载调整度、交叉调整度、纹波及负载跃变时的输出电压均大幅衰退.利用这些敏感参数,获取了位移损伤导致的电源性能衰退模式.根据位移损伤缺陷类型及退火温度,分析了DC/DC的退火规律,可为DC/DC质子辐射损伤模拟试验方法的建立及其空间应用提供依据.

简介：Thisworkpresentsthesaturableabsorption（SA）propertiesofCsPbBr3perovskitequantumdots（QDs）.TheperovskiteQDsshowexcellentSAperformancewithanonlinearabsorptioncoefficientof-35×10-2cm∕GWandafigureofmeritof3.7×10-14esucm.Further,theiruseassaturableabsorbersinapassivelyQ-switchedvisiblesolid-statelaserforthegenerationofsolitonpulsesisdemonstrated.TheseresultsdemonstratethepotentialfortheperovskiteQDstoactassaturableabsorbers.

简介：在这份报纸，我们在场一三维(3D)在为收音机频率的晶片水平的真空包装技术微机电的系统(RFMEMS)共鸣器，低损失的硅vias在被用来播送RF发信号。Au-Sn焊接结合被采用象电的导体一样提供真空封装。封装帽子的一个RF模型被建立评估包装的寄生效果，它提供3DRFMEMS封装的一个有效设计答案。与建议包装结构，24dB的signal-to-background比率(SBR)被完成，以及共鸣器的优秀因素(Q因素)在包装以后从8000～10400增加。包装共鸣器有线性频率温度(英尺)在在0楨?慰数?之间的一个温度范围特征?牵敶?牡?牰癯摩吗？？

简介：Strongnonlinear,electro-optical,andthermo-opticalpropertiesoflithiumniobate（LN）havegainedmuchattention.However,theimplementationofLiNbO3inrealdevicesisnotatrivialtaskduetodifficultiesinmanufacturingandhandlingthin-filmLN.Inthisstudy,weinvestigateanopticaldevicewheretheBlochsurfacewave（BSW）propagatesonthethin-filmLNtounlockitsproperties.First,accesstotheLNfilmfromair（oropenspace）isimportanttoexploititsproperties.Second,forsustainingtheBSW,one-dimensionalphotoniccrystal（1DPhC）isnecessarytobefabricatedunderthethin-filmLN.Weconsidertwomaterialplatformstorealizesuchadevice:bulkLNandcommercialthin-filmLN.Clearreflectancedipsobservedinfar-fieldmeasurementsdemonstratethepropagationofBSWsontopoftheLNsurfaceofthedesigned1DPhCs.

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简介：这研究向动人的表面为三维的麦克斯韦液体集中于热和集体流动的Cattaneo-Christov理论。有可变热电导率的不可压缩的laminar流动被考虑。流动产生由于表的双向拉长。热和集体运输的联合现象被说明。热和集体散开的Cattaneo-Christov模型被用来开发精力和集体种类的表情。在集体种类方程的一阶的化学反应术语被考虑。边界层假设导致管理数学模型。homotopic模拟被采用设想无尺寸的流动方程的结果。速度，温度，和集中的图显示出不同产生参数的效果。一个数字基准被介绍设想计算结果的会聚的价值。结果证明集中和温度地为热和集体散开的Cattaneo-Christov理论被腐烂。

简介：Two-dimensional（2D）graphitecarbonnitride（g-C3N4）nanosheetshavebeensuccessfullyusedasasaturableabsorber（SA）inapassivelyQ-switchedNd:LLFlaserat1.3μmforthefirsttime,tothebestofourknowledge.Underanincidentpumppowerof9.97W,theshortestpulsedurationof275nswasacquiredwithoutputpowerof0.96Wandpulserepetitionrateof154kHz,resultinginapulseenergyof6.2μJ.Inaddition,thesaturableabsorptionbehaviorsofzero-dimensional12nmg-C3N4nanoparticles（g-C3N4-NPs）andthree-dimensionalorderedmesoporousg-C3N4（mpg-C3N4）werealsoobserved,althoughtheirmorphologyandstructurewerequitedifferentfrom2Dg-C3N4.Theexperimentalresultsintroducethepotentialapplicationofg-C3N4nanomaterialsasSAsinQ-switchedlasers.

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简介：Inthisstudy,weinvestigatetheinfluenceofdopingonthechargetransferanddevicecharacteristicsparametersinthebulkheterojunctionsolarcellsbasedonpoly(3-hexylthiophene)(P3HT)andamethanofuUerenederivative(PCBM).Organicsemiconductorsarealsoknowntobenotpureandtheyhavedefectsandimpurities,someofthemarebeingchargedandactasp-typeorn-typedopants.Calculationsofthesolarcellcharacteristicsparametersversusthep-dopinglevelhavebeendoneatthreedifferentn-dopings(N_d)thatconsistof5×10~(17)cm~(-3),10~(18)cm~(-3),and5×10~(18)cm~(-3).Weperformtheanalysisofthedopingconcentrationthroughthedrift-diffusionmodel,andcalculatethecurrentandvoltagedopingdependency.Wefindthatatthreedifferentn-dopantlevels,optimump-typedopingisaboutN_p=6×10~(18)cm~(-3).Simulationresultshaveshownthatbyincreasingdopinglevel,V_(oc)monotonicallyincreasesbydoping.CellefficiencyreachesitsmaximumatsomewhathigherdopingasFFhasitspeakatN_p=3×10~(18)cm~(-3).Moreover,thispaperdemonstratesthattheoptimumvalueforthep-dopingisaboutN_p=6×10~(18)cm~(-3)andoptimumvalueforn-dopantisN_d=10~(18)cm~(-3),respectively.Thesimulatedresultsconfirmthatdopingconsiderablyaffectstheperformanceoforganicsolarcells.