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简介：Thermalstresscaninducebirefringenceinalasermedium,whichcancausedepolarizationofthelaser.Thedepolarizationeffectwillbeverysevereinahigh-average-powerlaser.Becausethedepolarizationwillmakethefrequencydoublingefficiencydecline,itshouldbecompensated.Inthispaper,thethermalcharacteristicsoftwokindsofmaterialsareanalyzedinrespectoftemperature,thermaldeformationandthermalstress.Thedepolarizationresultfromthermalstresswassimulated.Depolarizationonnon-uniformpumpingwasalsosimulated,andthecompensationmethodisdiscussed.

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简介：Athoroughunderstandingonthemechanicalpropertiesofcarbonnanotube(CNT)isessentialinextendingtheadvancedapplicationsofCNTbasedsystems.However,conductingexperimentstoestimatemechanicalpropertiesatthisscaleisextremelychallenging.Therefore,developmentofmechanisticmodelstoestimatethemechanicalpropertiesofCNTsalongwiththeintegrationofexistingcontinuummechanicsconceptsiscriticallyimportant.ThispaperpresentsacomprehensivemoleculardynamicssimulationstudyonthesizedependencyandpotentialfunctioninfluenceofmechanicalpropertiesofCNT.Commonlyusedreactivebondorder(REBO)andadaptiveintermolecularreactivebondorder(AIREBO)potentialfunctionswereconsideredinthisregard.Young'smodulusandshearmodulusofCNTsarederivedbyintegratingclassicalcontinuummechanicsconceptswithmoleculardynamicssimulations.TheresultsindicatethatthepotentialfunctionhasasignificantinfluenceontheestimatedmechanicalpropertiesofCNTs,andtheinfluenceofpotentialfieldismuchhigherwhenstudyingthetorsionalbehaviourofCNTsthanthetensilebehaviour.

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简介：Thepresentstudyprovidesdetailedexperimentalresultsonthesynthesisandcharacterizationofcarbonizedlithiumtitanatespinel(LTO)compositesaselectrodematerialsforlithiumioncapacitor.TheLTOparticlesweregraftedwithaporouscarbonlayerobtainedfromthepyrolysisofcamphor.ThegraphiticnatureofthecarbonwasconfirmedthroughRamanspectroscopy.Therelativecontributionsfromthecapacitiveanddiffusioncontrolledprocessesunderlyingtheseelectrodesweremathematicallymodeled.Electrontransportmechanismunderlyingtheseelectrodeswasdeterminedbymeasuringtheworkfunctions(φ)ofLTOandcarbongraftedLTOusingultravioletphotoelectronspectroscopy.ThesecarbongraftedLTOcompositesexhibitedanenergydensityof330mWhL-1andapeakpowerdensityof2.8kWL-1,whenemployedaselectrodesincoincellswithexcellentcyclingstabilityattheendof4000cycles.

简介：Thenatureofresistivetransitionofhigh-qualitycrystallinethinfilmsofYBa2Cu3O7-δhasbeenstudiedundermagneticfields(H)appliedalongthecdirectionoverawiderangeofdopedholes,p,intheCuO2planes.Thefield-andtemperature-dependentin-planeresistivity,ρab(T,H),hasbeenanalyzedwithinthethermallyassistedflux-flow(TAFF)formalism.Thefluxactivationenergy,U(T,H),hasbeenextractedfromthisanalysis.Thelow-Tpartoftheρab(T,H)datacanbedescribedbyanactivationenergyhavingthefunctionalformofU(T,H)=(1-t)m(H-0/H)β,wheret=T/Tc(reducedtemperature),andH0isafieldscalethatprimarilydeterminesthemagnitudeofU(T,H).Thetemperatureexponent,m,showsasystematicvariationwithp,whereasthefieldexponent,β,isinsensitivetothepvaluesandisclosetounity.TheH0,ontheotherhand,changesrapidlyaspisvaried.U(T,H)islinkedtothepinningpotentialandconsequentlyonthesuperconductingcondensationenergy.Sincethenormalstatepseudogapdirectlyaffectssuperconductingcondensationenergy,aclearcorrespondencebetweenH0andthePGenergyscale,εg,isfound.Possibleimplicationsoftheseresultsarediscussed.

简介：Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(～6.2V)ismuchlargerthanthatduetofullchargedelectrons(～1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.