简介:利用同步辐射(BSRF)漫散射站四圆衍射仪,对SiC体单晶的结构进行了判定以及对利用常压化学气相沉积(APCVD)生长的3C-SiC/Si(001)中的孪晶及含量进行了分析。六方{10-15}极图证明了该SiC单晶为6H(H为Hexagonal的缩写)结构。对3C-SiC外延薄膜,Φ扫描证明了3C-SiC外延生长于Si衬底上,外延取向关系为:(001)3C-SiC//(001)Si,[111]3C-SiC//[111]Si。3C-SiC的{111}极图在x=15.8°出现了新的衍射,采用六方{10-10}极图以及基体倒格点111、孪晶倒格点002的Mapping分析了x=15.8°处产生的衍射为3C-SiC孪晶所致,并利用ω扫描估算了孪晶的含量约为1%。
简介:Thetransportprocessof12CionsinwaterwasstudiedwithSRIMcodeandGeant4toolkit.TheSRIMresultsindicatethatthetransversediffusionof12Cionbeamcausesdistortionofenergydepositalongthebeamdirection.Thedistortionbecomesmorenotableasthetrans-versediffusionincreases.ThesimulationresultsofGeant4indicatethattheinfluenceofsecondaryfragmentsonenergydepositdistributionwouldbethemainfactorcausingthedistortioninhigherenergyrange.Intheregionadjacenttothebeamlinewherethecontributionfrom12Cionsdomi-nates,thecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfragmentsareignorable.Thefurtherfromthebeamaxistheregionlocates,thelargerthecontributionsfromsecondaryfragments,untilthecontributionsfromsecondaryfrag-mentsexceedthatof12C.Amongallthesecondaryfragments,thecontributionsofH,HeandBionsaremostlynotable.Itisalsofoundthatsomepositron-emittingsecondaryfragmentscouldbeveryusefulforpositionemittingtomography(PET).
简介:利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明:当衬底温度超过200K,乙烯即发生脱氢反应,σCH和σCC能级均向高结合能方向移动。在室温下,σCH和σCC能级位置与乙炔在Ru(1010)表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温,Ru(1010)表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010)表面以分子状态稳定吸附。在有K的Ru(1010)表面上,室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。
简介:BasedonthesinglebiasingelectrodeexperimentstooptimizetheconfinementofplasmainthedeviceofKT-5Ctokamak,dual-biasingelectrodeswereinsertedintotheKT5Cplasmaforthefirsttimetoexploretheenhancingeffectsofbiasingandthemechanismsofthebiasing.Bymeansofapplyingdifferentcombinationsofbiasingvoltagesontothedualelectrodes,thechangesofE_r,whicharethekeyfactorforboostinguptheE_r×Bflowshear,wereobserved.Thetimeevolutionshowedthattheinnerelectrodeplayedamajorroleindual-biasing,whichdrewlargercurrentthantheouterone.Theouterelectrodeproducedlittleinfluence.Itturnedoutthatthedual-biasingelectrodeswereaseffectiveasasingleoneinimprovingtheplasmaconfinement,forthemechanismofbiasingwasessentiallyanedgeeffect.
简介:InspiteofthecurrentprevalenceoftheCVD-basedprocesses,theelectricarcremainsaninterestingprocessforthesynthesisofcarbonnanoforms,thankstoitsversatility,robustnessandeasiness.Italsoallowsperformingin-situsubstitutionofcarbonatomsbyhetero-elementsinthegraphenelattice.Ourworkaimstoestablishacorrelationbetweentheplasmaproperties,typeandchemicalcomposition(andthesubstitutionrate)oftheobtainedsingle-wallcarbonnanotubes.TheplasmawascharacterizedbyopticalemissionspectroscopyandtheproductswereanalyzedbyhighresolutiontransmissionelectronmicroscopyandcorelevelElectronEnergy-LossSpectroscopy(EELS).Resultsshowthatahighboroncontentleadstoaplasmatemperaturedecreaseandhinderstheformationofnanotubes.Thiseffectcanbecompensatedbyincreasingthearccurrentand/oryttriumcontent.Theoptimalconditionsforthesynthesisofboron-and/ornitrogen-substitutednanotubescorrespondtoahighaxialplasmatemperatureassociatedtoastrongradialgradient.EELSanalysisconfirmedthattheboronincorporatesintothegraphemelattice.
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