简介：Thesynthesisofpolyfluoroalkoxylsubstitutedtetrakisphenylporphyrinisreported.ThereactioniscarryingoutusingLewisacidBF3·OEt2ascatalystandp-chloranilasoxidant.Theyieldsoftheporphyrinsareabout30—40%.

简介：包含perfluorooctyl一半的基于Fluorene的聚合物被设计并且综合。高electronegativity和FH-C相互作用在氟化的聚合物是在场的，它稍微导致在电影的紫外力的吸收蓝移动。从氟化的溶剂准备的含氟聚合物电影比在非氟化的溶剂准备的那些显示出lager接触角度。

简介：Aseriesofnovelfluorine-containingacrylates6a-6gweresynthesizedviathecondensationofethylcyanoacetateandtrifluoroaceticanhydride,followedbychloridizationandthecouplingreactionwithamines.Thesenewcompoundsexhibitedsomebiologicalactivityaspreliminarybioassayindicated.Aplausiblereactionmechanismwasoutlinedanddiscussed.

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简介：Fluorineinmoldpowderisknownasharmfultohumanhealthandtheenvironment.Beingtheadvocateofgreenproduction,Baosteeldevelopedanenvironmentallyfriendlymoldpowderwithoutfluorine.Themainproblemoffluorine-freefluxfilmissmallheatresistanceandthustheheattransferintensityofthemoldistoolarge,whichtosomeextenthinderstheincreaseofthecastingspeed.Withtheheatflowsimulationequipment,controllingprecipitationofcrystalinfluxandsolidificationtemperatureproperly,fluorine-freemoldpowderforlowcarbonsteel,whichsubstitutesFwithB2O3,wassuccessfullydevelopedandappliedinindustrialproduction.Theproductionresultsshowthat,byusingboronicfluorine-freemoldpowder,theboronincrementinmoltensteelislessthan1.3ppmforconventionalaluminiumkilledlowcarbonsteel.

简介：WeinvestigatereactivefluorineatomspectroscopiccharacterizationinatmosphericpressureofHe/SF6plasmausingatomicemissionspectrometry.Asinputradiofrequency(RF)powerlevelsareraisedfrom140to220W,theemissionspectraof685.60(3p4D→3s4Ptransition)and739.87nm(3p4P→3s4Ptransition)increasesignificantly.Moreover,anoptimalvalueofSF6volumeconcentrationintheproductionoffluorineradicals,whichis0.8%isachieved.AdditionofcertainamountsofO2intoHe/SF6plasmaresultsinthepromotionofSF6dissociation.EmissionintensitiesoffluorineatomsshowthemaximumattheO2/SF6ratioof0.4.

简介：ThephysicalandelectricalpropertiesofBF2+implantedpolysiliconfilmssubjectedtorapidthermalannealing（RTA）arepresented.ItisfoundthattheoutdiffusionofFanditssegregationatpolysilicon/siliconoxideinterfaceduringRTAarethemajorcausesofFanomalousmigration.FluorinebubbleswereobservedinBF2+implantedsamplesatdosesof1×1015and5×1015cm-2afterRTA.

简介：一系列新奇的镧锶铝酸盐黄磷，Ce3+-dopedLaSr2AlO(5-0.5x)Fx(LSAF)黄磷成功地在减少空气下面用高温度的稳固的州的合成过程被综合(H2/N2=1/4)。X光检查衍射模式表明那件LSAF样品是纯LaSr2有1250的sintering温度的AlO5阶段?桰獯桰牯?祢挠湯牴汯楬杮挠祲瑳污映敩摬攠癮物湯敭瑮眠瑩?汦潵楲敮椠湯?猼灵?猯灵>

简介：Thecarbon-13spin-spinrelaxationtimesoffluorine-containingionomersaremeasuredandmotionalcorrelationtimesτ_oandτ_darecalculatedbyusingVJGMmodel.Theresultsshowthatthemotionsofpolymermainchaininionomersbecomemoredifficultwithincreasingofionizationdegreeandcontentsoffunctionalgroup,anddependonthefinestructuresandstabilityofionicmicrodomains.

简介：喝水类型斑釉是在有患者的最大的数字的中国的最有害的地方性的疾病。尽管政策的实现有效地控制了这种地方性的疾病的传播改变水来源降低氟化物水平，因为，它的流行不能彻底地被停止地方性地，diseased区域能仍然损害的在这些的高氟化物的环境背景通过食物链的人的健康。因此，在喝的水类型斑釉上进行更深去的研究是必要的。为了调查高氟的符号的效果，在在他们的根附近的热春天类型斑釉疾病区域，本地水，水稻土，米饭，整个蔬菜和土壤的庄稼和人的健康上的环境背景为分析被取样。结果与在在自然背景并且在社会背景类似于斑釉疾病区域的没有斑釉的区域的控制组的那些相比。大米和蔬菜能在土壤或在灌溉水积累水溶性的氟的符号任何一个，这被显示，并且不同庄稼有修理氟的符号的不同能力。在在斑釉疾病和没有斑釉的区域的蔬菜的不同部分的氟的符号的内容统计上被分类。结果证明在斑釉疾病区域的蔬菜的根，澡盆ers，叶子和花的氟的符号内容分别地是3.56，1.17，3.07和3.23mg/kg。然而，比较证明在没有斑釉的区域，氟的符号内容分别地是2.17，0.70，1.91和2.52mg/kg。而且，庄稼的不同部分也显示出显著地不同的氟的符号固定能力。强烈新陈代谢的部分的氟的符号内容相对高，这被表明。例如，蔬菜的根，叶子和花的氟的符号内容比茎的那些高得多。种子的氟的符号固定能力是很弱的。以便把人的身体的暴露的风险归结为氟化物，到改正氟的符号的庄稼的能力上的温泉水的影响应该被减少像一样可能。阻止庄稼与温泉水被灌溉作为在被温泉水严重地影响的区域的主要可食的部分是很重要的，与相对低的能力种庄稼充实氟的符号是明智的，例如有种子或澡盆ers的那些。

简介：Thedegradationmechanismofenhancement-modeAlGaN/GaNhighelectronmobilitytransistors(HEMTs)fabricatedbyfluorineplasmaionimplantationtechnologyisonemajorconcernofHEMT’sreliability.Itisobservedthatthethresholdvoltageshowsasignificantnegativeshiftduringthetypicallong-termon-stategateoverdrivestress.Thedegradationdoesnotoriginatefromthepresenceofas-growntrapsintheAlGaNbarrierlayerorthegeneratedtrapsduringfluorineionimplantationprocess.Bycomparingtherelationshipsbetweentheshiftofthresholdvoltageandthecumulativeinjectedelectronsunderdifferentstressconditions,agoodagreementisobserved.Itprovidesdirectexperimentalevidencetosupporttheimpactionizationphysicalmodel,inwhichthedegradationofE-modeHEMTsundergateoverdrivestresscanbeexplainedbytheionizationoffluorineionsintheAlGaNbarrierlayerbyelectronsinjectedfrom2DEGchannel.Furthermore,ourresultsshowthattherearefewnewtrapsgeneratedintheAlGaNbarrierlayerduringthegateoverdrivestress,andtheionizedfluorineionscannotrecapturetheelectrons.

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