简介：摘要：使用MOCVD方法在Ge（100）衬底上生长GaInP外延材料，在室温下，研究了Sb掺杂对GaInP有序度的影响，PL测试结果显示：未掺入Sb时，峰值波长(WLP)为683nm，禁带宽度(Eg)为1.814eV，Sb掺杂有效量为13.8时，WLP为652nm，Eg为1.903eV，Eg展宽89meV。测试结果表明，Sb掺杂显著降低了GaInP的有序度，并引起PL光谱的蓝移和Eg的增大，但Sb掺杂没有引入新组分相。这种变化主要归因于Sb原子的引入破坏了Ga和In原子的有序排列，导致材料的晶体结构趋于无序化。

简介：ThisworkstudiesTedopingeffectsonthedirectbandgapphotoluminescence（PL）ofindirectGaxIn1-xPalloys（0.72≤x≤0.74）.Thetemperature-dependentPLshowsthattheenergydifferencebetweendirectΓvalleyandindirectXvalleysisreducedduetothebandgapnarrowing（BGN）effect,andthedirectbandtransitiongraduallydominatesthePLspectraastemperatureincreases.CarrierthermalizationhasbeenobservedforTe-dopedGaxIn1-xPsamples,asintegratedPLintensityincreaseswithincreasingtemperaturefrom175to300K.Theactivationenergyforcarrierthermalizationisreducedasdopingconcentrationincreases.BothBGNeffectandcarrierthermalizationcontributetothecarrierinjectionintotheΓvalley.Asaresult,thedirectbandtransitionisenhancedintheTe-dopedindirectGaxIn1-xPalloys.Therefore,thePLintensityoftheGa0.74In0.26Psamplewithactivedopingconcentrationof9×1017cm-3isincreasedbyfivetimescomparedwiththatofanominallyundopedsample.ItisalsofoundthatthePLintensityisdegradedsignificantlywhenthedopingconcentrationisincreasedto5×1018cm-3.Fromcross-sectiontransmissionelectronmicroscopy,nolargedopantclustersorotherextendeddefectswerefoundcontributingtothisdegradation.

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简介：GaInP/GaAs/Getriple-junctionsolarcellswereirradiatedwith50keVand100keVprotonsatfluencesof5×1010cm-2,1×1011cm-2,1×1012cm-2,and1×1013cm-2.Theirperformancedegradationisanalyzedusingcurrent-voltagecharacteristicsandspectralresponsemeasurements,andthenthechangesinIsc,Voc,Pmaxandthespectralresponseofthecellsareobservedasfunctionsofprotonirradiationfluenceandenergy.Theresultsshowthatthespectralresponseofthetopcelldegradesmoresignificantlythanthatofthemiddlecell,and100keVproton-induceddegradationratesofIsc,VocandPmaxarelargercomparedwith50keVprotonirradiation.