简介：Inthiswork,resultsonthestudyofthestructureandphotoluminescence(PL)propertiesofSiOxNythinfilmsarepresented.Thefilmsweredepositedatroomtemperatureusingadual-ion-beamco-sputteringsystem.TheXRDandTEMresultsshowthatthedepositedfilmshaveanamorphousstructure.IntheXPSresult,wefindN1sspectraconsistofonesymmetricsinglepeakat397.8eV,indicatingthatthenitrogenatomsaremainlybondedtosilicon.ItisinagreementtotheresultofFTIR.InSiOxNyfilms,anintensesinglePLpeakat590nmisobserved.Furthermore,withtheincreaseoftheNcontentintheSiOxNyfilms,theintensityofthePLpeakat590nmincreasesalot.ThePLpeakof590nmissuggestedtooriginatefromN-relateddefects.
简介：SiliconoxynitridewasaddedinshapedAl2O3-SiC-Crefractorymaterialtoimprovetheslagresistanceinthispaper.Optimumaddingquantityofsiliconoxynitridepowderwasalsostudied.TheresultsshowthattheslagresistanceofAl2O3-SiC-Cshapedrefractoryisimprovedwhen2%or3%Si2N2Oisadded.AreasonableamountofSi2N2OaddedintoAl2O3-SiC-Cshapedrefractorycanproducesiliconoxideintotheslag,whichcanimprovetheviscosityofslagandpreventtheslagerosionandpenetration.
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