简介:Vertical-cavitysurface-emittinglasers(VCSELs)aretheidealopticalsourcesfordatacommunicationandsensing.Indatacommunication,largedataratescombinedwithexcellentenergyefficiencyandtemperaturestabilityhavebeenachievedbasedonadvanceddevicedesignandmodulationformats.VCSELsarealsopromisingsourcesforphotonicintegratedcircuitsduetotheirsmallfootprintandlowpowerconsumption.Also,VCSELsarecommonlyusedforawidevarietyofapplicationsintheconsumerelectronicsmarket.Theseapplicationsrangefromlasermicetothree-dimensional(3D)sensingandimaging,includingvarious3Dmovementdetections,suchasgesturerecognitionorfacerecognition.NovelVCSELtypeswillincludemetastructures,exhibitingadditionaluniqueproperties,oflargestimportancefornext-generationdatacommunication,sensing,andphotonicintegratedcircuits.
简介:Theeffectofmesasizeonthethermalcharacteristicsofetchedmesavertical-cavitysurfaceemittinglasers(VCSELs)isstudied.ThenumericalresultsshowthatthemesasizeofthetopmirrorstronglyinfluencesthetemperaturedistributioninsidetheetchedmesaVCSEL.Underacertaindrivingvoltage,withdecreasingmesasize,thelocationofthemaximaltemperaturemovestowardsthep-contactmetal,thetemperatureinthecoreregionoftheactivelayerrisesgreatly,andthethermalcharacteristicsoftheetchedmesaVCSELswilldeteriorate.
简介:Atunableslowlightof2.5-Gb/spseudo-randombinarysequencesignalusinga1550-nmvertical-cavitysurface-emittinglaser(VCSEL)isexperimentallydemonstrated.Theinfluencesofthebiascurrentandthegainsaturationontheslowlightareinvestigated.Withbiascurrentincreasing,tunableopticalgroupdelayupto98psisobtainedatroomtemperature.Demonstrationofthetimedelaybetween16and24psbysignalintensitychangeisreported.Underanappropriatebiascurrent,bytuningtheinputsignaltotrackthepeakgainwavelengthoftheVCSEL,slowlightofapowerpenaltyaslowas1dBisachieved.Withsuchalowpowerpenalty,theVCSELhasagreatpotentialapplicationasacompactopticalbuffer.
简介:Opticalcouplingbehaviorandassociatedeffectsintwo-dimensionalimplant-definedcoherentlycoupledverticalcavitysurface-emittinglaser(VCSEL)arraysarestudiedviabothexperimentsandtheoreticalcalculations.Experimentsshowthatopticalcouplingbetweenarrayelementscanenhancethearray’soutputpower.Additionally,opticalcouplingvialeakyopticalfieldscanprovideextraopticalgainforthearrayelements,whichcanthenreducethethresholdsoftheseelements.Elementscanevenbepumpedwithoutcurrentinjectiontoemitlightbyreceivingastrongleakyopticalfieldfromotherarrayelements.Opticalcouplingcanalsocauseunusualphenomena:thecentralelementsinlarge-areacoherentlycoupledVCSELarraysthatlasepriortotheouterelementswhenthearraysarebiased,ortheaverageinjectioncurrentrequiredforeachelementtolase,whichismuchlowerthanthethresholdforasingleVCSEL.Theoreticalcalculationsareperformedtoexplaintheexperimentalresults.
简介:InGaN-basedlight-emittingdiode(LED)asforthereplacementofconventionalfluorescentlightingsourcestillneedsagreatefforttoimprovethelight-extractingefficiencyaswellasinternalquantumefficiencyofLEDs.Surfaceplasmontechnologyhasrecentlyattractedconsiderableinterest,becausethespontaneousemissionrateandthelightextractionefficiencyofalight-emittingdevicecanbesimultaneouslyenhancedthroughthecouplingbetweenanInGaNquantumwellandsurfaceplasmons.Thesurfaceplasmon-emittercouplingtechniquewouldleadtohighbrightnessmultichipwhiteLEDsthatofferrealisticalternativestoconventionalfluorescentlightsources.Inthisarticle,thepossibleenhancementmechanismofsurfaceplasmonisdiscussed,andthenrecentdevelopmentsofsurface-plasmon-enhancedlight-emittingdiodeareintroduced.
简介:Anintracavityfrequency-doubledverticalexternalcavitysurfaceemittinglaser(VECSEL)withgreenlightisdemonstrated.ThefundamentalfrequencylasercavityconsistsofadistributedBraggreflector(DBR)ofthegainchipandanexternalmirror.A12-mWfrequency-doubledoutputhasbeenreachedat540nmwithanonlinearcrystalLBOwhenthefundamentalfrequencyoutputis44mWat1080nm.Thefrequencydoublingefficiencyisabout30%.
简介:Amethodbasedonthetheoryoftransfermatrixtodesigntheintegratedmicrolensforthecollimationofvertical-cavitysurfaceemittinglaser(VCSEL)arrayispresented.Theintegratedmicrolensesfabricatedonthesubstratedirectlyandonacertainpolymermaterialwhichisonthesubstrateareconsidered.Therelationshipsbetweentheradiusofcurvature,beamwaistandthedivergenceangleaftercollimationareobtainedwiththehelpofZEMAX.Theresultsshowthatthedeviceswiththedivergenceangleof15°(1/e2)andbeamwaistof2μmcanbeimprovedtothosewiththedivergenceanglelowerthan1°,andthedeviceswithbeamwaistof10μmcanbeimprovedtothosewiththedivergenceanglelowerthan3°,whichisagoodreferenceformanufacturinghigh-powerdeviceswithsmalldivergenceangle.Theconclusionsincludingincreasingthethicknessesofboththesubstrateandpolymermaterialandreducingthediameterofoxidizedlayeraredrawn,whichwillbeanimportantguidanceforexperimentresearch.
简介:PARAMETRICSURFACE/SURFACEINTERSECTIONZengXianglin;WangQifu;ZhouJi;YuJunPARAMETRICSURFACE/SURFACEINTERSECTION¥ZengXianglin;Wan...
简介:Wehavefabricatedatop-emittingorganiclight-emittingdeviceonsiliconsubstratewithhighyellowluminancebasedon5,6,11,12-tetraphenylnaphthacenesub-monolayer.Itconsistsofathinlayerofhighlyconductivesilverasthesemitransparentcathodeandsurfaced-modifiedAgastheanode.Thedeviceturnsonat3Vwiththeluminanceof8.4cd/m^2.Themaximumcurrentefficiencyis1.3cd/Aat6Vandtheluminancereaches14790cd/m^2at14V.Theperformanceofthedeviceisexcellentintop-emittingorganiclight-emittingdevicesaccordingtoourknowledge.
简介:Spurredonbytheinventionofthebluelight-emittingdiode(LED)aquarterofacenturyago,theLEDindustryhasadvanceddramaticallyandhasrevolutionizedthesignaling/signage,mobileandflatpaneldisplay,andmorerecently,generallightingmarkets.Indeed,LEDsnowout-surpassinperformanceallconventional(e.g.,incandescent,fluorescent,high-intensitydischarge)lightsourcesingeneralilluminationapplications.Thequestionarises:whatmoreistobedone?ThuscomesthethesisforthisspecialissueonLEDsandapplications.Fromthecontributedarticles,welearnthatLEDtechnologycontinuestoevolveandtransformitselfnotonlywithintheexistingapplicationsbutisalsopositioningforbrandnewapplicationstocome,bothofwhicharehighlightedhere.
简介:Theinvertedbottom-emittingorganiclight-emittingdevices(IBOLEDs)wereprepared,withthestructureofITO/A1(xnm)/LiF(1nm)/Bphen(40nm)/CBP:Girl(14%):R-4b(2%)(10nm)/BCP(3nm)/CBP:Glrl(14%):R-4b(2%)(20nm)/TCTA(10nm)/NPB(40nm)/MoO3(40nm)/A1(100rim),wherethethicknessofelectroninjectionlayerA1(x)are0nm,2nm,3nm,4nmand5nm,respectively.Inthispaper,theelectroninjectionconditionandluminancepropertiesofinverteddeviceswereinvestigatedbychangingthethicknessofA1layerinAFLiFcompoundthinfilm.ItturnsoutthattheintroductionofA1layercanimproveelectroninjectionofthedevicesdramatically.Furthermore,thedeviceexertslowerdrivingvoltageandhighercurrentefficiencywhenthethicknessofelectroninjectionA1layeris3nm.Forexample,thecurrentefficiencyofthedevicewith3-urn-thickA1layerreaches19.75cd·A^-1whendrivingvoltageis7V,whichis1.24,1.17and17.03timeslargerthanthoseofthedeviceswith2nm,4nmand5nmA1layer,respectively.Thedevicepropertyreachesuptothelevelofcorrespondingconventionaldevice.Inaddition,allin-verteddeviceswithelectroninjectionA1layershowsuperiorstabilityofcolorcoordinateduetotheadoptionofco-evaporationemittinglayerandBCPspacer-layer,andthecolorcoordinateoftheinverteddevicewith3-nm-thickAIlayeronlychangesfrom(0.5806,0.4056)to(0.5328,0.4363)whendrivingvoltageincreasesfrom6Vto10V.
简介:Inthisarticlewedefineasurfacefiniteelementmethod(SFEM)forthenumericalsolutionofparabolicpartialdifferentialequationsonhypersurfacesFinR~(n+1).ThekeyideaisbasedontheapproximationofFΓbyapolyhedralsurfaceΓ_hconsistingofaunionofsimplices(trianglesforn=2,intervalsforn=1)withverticesonF.AfiniteelementspaceoffunctionsisthendefinedbytakingthecontinuousfunctionsonΓ_hwhicharelinearaffineoneachsimplexofthepolygonalsurface.WeusesurfacegradientstodefineweakformsofellipticoperatorsandnaturallygenerateweakformulationsofellipticandparabolicequationsonΓ.Ourfiniteelementmethodisappliedtoweakformsoftheequations.Thecomputationofthemassandelementstiffnessmatricesaresimpleandstraightforward.Wegiveanexampleoferrorboundsinthecaseofsemi-discretizationinspaceforafourthorderlinearproblem.Numericalexperimentsaredescribedforseverallinearandnonlinearpartialdifferentialequations.Inparticularthepowerofthemethodisdemonstratedbyemployingit,tosolvehighlynonlinearsecondandfourthorderproblemssuchassurfaceAllen-CahnandCahn-Hilliardequationsandsurfacelevelsetequationsforgeodesicmeancuryatureflow.
简介:Aminopropyl,ethylenediamine,ethenylandglycidoxygroupsfunctionalizednanoparticles,withaveragediametersrangingfrom4to6nmandcontaining1.17mmolofgroups/g,arereadilyobtainedfromnanodiamondsmodifiedwithsilanecouplingagent.Forthestudyofthesenanoparticles,TEM,IRS,XPS,andTGanalysismethodshavebeenused.
简介:Thetimeevolutionofoxygenplasmatreatedpolystyrene(PS)surfaceswasinvestigateduponstoringthemintheairundercontrolledhumidityconditions.Themethodsofwatercontactangle,X-rayphotoelectronspectroscopy(XPS),sumfrequencygeneration(SFG)vibrationalspectroscopy,andatomicforcemicroscopy(AFM)wereusedtoinferthesurfacepropertiesandstructure.ChemicalgroupscontainingoxygenwereformedonthePSsurfacewiththeplasmatreatment,demonstratedbywatercontactangleandXPS.Thesurfacepolaritydecayedmarkedlyontime,asassessedbysteadyincreaseinthewatercontactangleasafunctionofstoragetime,fromzerotoaround60°.Theobserveddecayisinterpretedasarisingfromsurfacerearrangementprocessestoburyingpolargroupsawayfromtheuppermostlayerofthesurfaces,whichisincontactwithair.Ontheotherhand,XPSresultsshowthatthechemicalcompositioninthefirst3nmsurfacelayerisunaffectedbythesurfaceaging,andthedepthprofileofoxygenisessentiallythesamewithtime.ApossiblechangeofPSsurfaceroughnesswasexaminedbyAFM,anditshowedthattheincreaseofwatercontactangleduringsurfaceagingcouldnotbeattributedtosurfaceroughness.Thus,itisconcludedthatsurfaceagingisattributabletosurfacereorganizationandthemotionofoxygencontaininggroupsisconfinedwithintheXPSprobingdepth.SFGspectroscopy,whichisintrinsicallyinterface-specific,wasusedtodetectthechemicalstructureofPSsurfaceatthemolecularlevelaftervariousagingtimes.Theresultsareinterpretedasfollows.DuringtheagingoftheplasmatreatedPSsurfaces,theoxygencontaininggroupsundergoreorientationprocessestowardthepolymerbulkand/orparalleltothesurface,whiletheCH2moietystandsuponthePSsurface.Ourresultsindicatethatthesurfaceconfigurationchangesdonotrequirelargelengthscalesegmentalmotionsormigrationofmacromolecules.Motionsthatareresponsibleforsurfaceconfigurationchangescoul