简介：ANewmethod,namedatmosphericpressureplasmapolishing,fortheultra-smoothmachiningofthesiliconbasedmaterialsisintroduced.ByinputtingtheCF4gasintotheatmosphericpressureplasmaflame,highdensityreactiveradicalswillbegenerated,whichwillthenreactwiththesiliconbasedmaterials.ThereactionproductisthevaporizationoftheSiF4,whichcanbeeasilyprocessed.Inthisway,theatomicscalematerialremovalcanberealizedandthedefectfreeultra-smoothsurfacecanbeobtained.Anexperimentalsetupisbuiltup,andtheSiCpolishingexperimentiscarriedout.TheAFMtestresultshowsthatthefinishedsurfaceroughness(Ra)canbeimprovedfrom4.529nmto0.926nmin3minutes.
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