简介：Anewbipolarjunctionfield-effecttransistor(BJFET)wasdescribed.ThetheoreticalanalysisandcomputersimulationofBJFETobstructivecharacteristicareachieved.ThegatebiasvoltageaffectstheBJFETobstructivevoltagegreatly.TheBJFETobstructivecharacteristicisrelevanttostructureparametersofchannelwidthWandchannellengthL.Thedecrease-bias-voltageoperationcanweakenthedeviceobstructivecharacteristic.TheforwardturnindeviceforwardobstructiveregioncanalsoaffecttheBJFETobstructivecharacteristic.BJFEThasagoodhightemperatureobstructivecharacteristicandcanbeapplyingtohightemperaturestatusashighvoltageswitchdevices.
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