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简介：Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.

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简介：WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.

简介：Asecondgenerationsolaradaptiveoptics(AO)systemisbuiltandinstalledatthe1-mNewVacuumSolarTelescope(NVST)oftheFuxianSolarObservatory(FSO)in2015.TheAOhigh-ordercorrectionsystemconsistsofa151-elementdeformablemirror(DM),acorrelatingShack–Hartmann(SH)wavefrontsensor(WFS)witha3500Hzframerate,andareal-timecontroller.ThesystemsawfirstlightonMar.16,2015.Thesimultaneoushigh-resolutionphotosphereandchromosphereimageswithAOareobtained.Theon-skyobservationalresultsshowthatthecontrastandresolutionoftheimagesareapparentlyimprovedafterthewavefrontcorrectionbyAO.

简介：Anall-fiberopticallaserpulsemulti-passstretcherusingachirpedfiberBragggrating(CFBG)isdemonstrated.Pulsesfroma1053-nmmode-lockedfiberseedoscillatorarestretchedbymultiplepassingthroughachirpedfibergratingsetinafiberregenerativeamplifierstructure.Westretchthepulsefrom16psto1.855nsafterittransmitssevenloopsinthestretcher.Themainfactorsthataffectthestretchingresultsarediscussed.

简介：SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.

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