简介:WereportonastudyofinterfacialstructureofGaNfilmsgrownonGaAs(001)substratesbyplasma-assistedmolecularbeamepitaxyusingx-raygrazing-anglespecularreflection.WeshowthatinterfaciallayerswithelectrondensitiesdifferingfromthoseofGaNandGaAswereformedupondepositionofGaN.Itisalsofoundthattheinterfacialstructureofoursystemsdependsstronglyonthecourseoftheinitiallayerdeposition.ThephasepurityoftheGaNfilmswasexaminedbyx-rayreciprocalspacemapping.Asimplekineticgrowthmodelsuggestedbyourresultshasbeenpresented.