简介：目的探讨低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效.方法采用JAM-II型多功能半导体激光治疗仪(激光物质为GaA1As,激光波长650nm)对22例不同程度的义眼座暴露患者进行激光照射治疗,并将结果与既往采用药物及手术治疗的20例义眼座暴露患者比较.结果激光组22例全部愈合(100%);药物及手术组中轻、中、重度的愈合率分别为83.3%,63.6%和0.经采用X2检验之四格表精确检验法处理,2组间轻度患者的愈合率在统计学上差异无显著性意义(P=0.545),而2组间中度和重度患者的愈合率在统计学上差异有显著性意义(P＜0.05).结论低功率半导体激光治疗羟基磷灰石义眼座暴露的疗效优于药物及手术方法.可用于预防及治疗羟基磷灰石义眼座暴露.

简介：AIM:Toevaluatethelong-termresultsandcomplicationsofahmedglaucomavalve(AGV)implantationinrefractoryglaucoma.·METHODS:Aretrospectivereviewof13patients(13eyes)withrefractoryglaucomawhounderwentAGVimplantationandhadaminimumfollow-upof18monthswasperformed.Allpatientsunderwentacompleteophthalmologicexaminationandintraocularpressure(IOP)measurementbeforesurgeryandat1month,3months,6months,1yearaftersurgeryandyearlyafterwards.Complicationsandthenumberofantiglaucomamedicationsneededwererecorded.·RESULTS:Meanagewas27.3±16.0years.Alleyes(100%)hadatleastonepriorincisionalsurgery.Meanfollow-upwas61.3±30.8months.IOPwasreducedfromameanof35.0±7.0mmHgto18.2±7.9mmHgat12monthsandto17.0±4.1mmHgat96months(P<0.05)withalowernumberofmedicationsfrombaseline,76.9%patientsrequiredadditionalprocedurestoachievethesuccesscriteriasetbypreviouslypublishedseries.Themostcommoncomplicationswereencapculatedcystformationineighteyes(61.5%)andtubeexposureinfoureyes(30.8%).·CONCLUSION:EncapsulatedcystformationwasthemostcommoncomplicationwhichhinderedsuccesfulIOPcontrolafterAGVimplantinsertionforrefractoryglaucoma.Despitecystexcisionwithanti-fibroticagents,successfulIOPreductionwasnotachievedin76.9%ofthepatientswithoutantiglaucomamedication.