Investigation of hybrid microring lasers adhesively bonded on silicon wafer

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摘要 ThermalcharacteristicsarenumericallyinvestigatedforthehybridAlGaInAs/InPonsiliconmicroringlaserswithdifferentringradiiandwidths.Lowthresholdcurrentandlowactiveregiontemperatureriseareexpectedforamicroringlaserwithanarrowringwidth.Basedonthethermalanalysisandthe3Dsimulationformodecharacteristics,ahybridAlGaInAs/InPonsiliconmicroringlaserswithaninnern-electrodelaterallyconfinedbythep-electrodemetalliclayerisfabricatedusinganadhesivebondingtechnique.Athresholdcurrentof4mAisachievedforahybridmicroringlaserwitharadiusof20μmandaringwidthof3.5μmat12°C,andthecorrespondingthresholdcurrentdensityisaslowas1kA∕cm~2.Theinfluenceofthelocationofsiliconwaveguideonoutputperformanceisstudiedexperimentallyforimprovingtheoutputcouplingefficiency.Furthermore,continuous-waveelectricallyinjectedlasingupto55°Cisrealizedforahybridmicroringlaserwitharadiusof30μmandaringwidthof3μm.
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出版日期 2015年06月16日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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