Electrical nonlinearity in silicon modulators based on reversed PN junctions

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摘要 TheelectricalnonlinearityofsiliconmodulatorsbasedonreversedPNjunctionswasfoundtoseverelylimitthelinearityofthemodulators.Thiseffect,however,wasinadvertentlyneglectedinpreviousstudies.Consideringtheelectricalnonlinearityinsimulation,a32.2dBdegradationintheCDR3(i.e.,thesuppressionratiobetweenthefundamentalsignalandintermodulationdistortion)ofthemodulatorwasobservedatamodulationspeedof12GHz,andthespuriousfreedynamicrangewassimultaneouslydegradedby17.4dB.ItwasalsofoundthatthelinearityofthesiliconmodulatorcouldbeimprovedbyreducingtheseriesresistanceofthePNjunction.Thefrequencydependenceofthelinearityduetotheelectricalnonlinearitywasalsoinvestigated.
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出版日期 2017年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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