首页 > 《中国物理快报：英文版》 > 2009年3期 > Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

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DOI 3j7x0r0v41/669329

作者韩跃平;韩炎

机构地区不详

出处《中国物理快报：英文版》 2009年3期

关键词物理化学性质金属氮化物低温氧化二氧化硅金属氧化物半导体 MOS器件

分类 [理学][物理]

出版日期 2009年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

中国物理快报：英文版

中国物理快报：英文版

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物理化学性质金属氮化物低温氧化二氧化硅金属氧化物半导体 MOS器件

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