简介:本文介绍由三片集成块CS8204、WE9140A、TEA1061组成的典型电话机电路,主要分析电话机的电源供给电路、振铃电路、拨号电路和通话电路。
简介:Inthiswork,webrieflydiscussanovelclassofmodifiedgravitylikef(T,TG)gravity.Inthisbackground,weassumethenewagegraphicversionofpilgrimdarkenergyandreconstructf(T,TG)modelsfortwospecificvaluesofs.Wealsodiscusstheequationofstateparameter,squaredspeedofsoundandwDE-wDEplaneforthesereconstructedf(T,TG)models.Theequationofstateparameterprovidesphantom-likebehavioroftheuniverse.ThewDE-wDEplanealsocorrespondstoΛCDMlimit,thawingandfreezingregionsforbothmodels.
简介:我们为f(T)严肃理论在宇宙论的限制的精确上探索SandageLoeb(SL)测试的影响。因为它在远类星体的系列在Lyman-森林里测量redshift飘移,SL测试是对当前的宇宙论的观察的重要补充,盖住2z的redshift沙漠5。避免数据矛盾,当模仿30的基准的模型嘲笑SL测试数据,我们基于当前的联合观察数据使用最好合适的模型。我们确定为f(T)严肃理论的参数评价上的这些SL测试数据的影响。二个典型f(T)模型被考虑,幂定律模型f(T)PL和指数形式的模型f(T)终止。结果证明SL测试罐头有效地打破存在在在另外的宇宙论的观察的今日的事密度m和小瘤常数H0之间的强壮的退化。为考虑f(T)模型,SL测试的30年的观察能极其改进m和H0的限制精确,但是不能有效地改进模型参数的限制精确。
简介:目的:为使零件在设计阶段实现公差的自动分配,研究线轮廓度在计算机中的表达模型。创新点:1.提出一种新的构建线轮廓度公差T-Map图的方法;2.用运动学等效的方法表示理想轮廓公差域的允许偏差。方法:1.将零件轮廓分解成多段,然后分别为每段生成一个实体模型T-Map(图6和7);2.利用布尔交运算将所有分段T-Map合成一个完整线轮廓度的T-Map(图8);3.以弧形短槽为例,演示创建线轮廓度的方法步骤。结论:将弧形短槽轮廓分成多段,先实现每一段的T-Map,再利用布尔交实现整体线轮廓度公差的T-Map图,证明该方法在构建任意轮廓的线轮廓度公差上的有效性。
简介:WehavesynthesizedandinvestigatedphysicalpropertiesoftwonewquaternarycompoundsGd2CoAl4T2(T=Si,Ge)singlecrystals,whichareisostructuraltoTb2NiAl4Ge2andEr2CoAl4Ge2.Themostimportantstructuralfeatureofthesematerialsistheanti-CaF2-typeCoAl4T2slabs.Thesematerialsshowmetallicbehaviorbelow300Kandthereisalong-rangeantiferromagnetic(AFM)transitionappearingat20and27KforGdCoAl4Ge2andGd2CoAl4Si2,respectively.ResistivityandheatcapacitymeasurementsalsoconfirmthesebulkAFMtransitions.Furtheranalysisindicatesthatthislong-rangeantiferromagnetismshouldresultfromthemagneticinteractionbetweenlocalmomentsofGd^3+ions.
简介:ThegrowinginterestintheuseofGalliumArsenidssemiconductormaterialshaspresentedmanyopportunitiesfordeviceoperationalspeedimprovementsbuthasalsopresentedmanyproblemsforthedevicemaker,Anoveldeep-submicronx-raylithographyprocessforT-shapedgatepatternsusefulforhigh-electron-mobilitytransistors(HEMT)isintroducedinthiswork.InthefabricationofT-shapedgateatherrlayerresistsmethodisused.Thex-rayexposureexperimentswerefinishedbyBeijingSynchrotronRadiationFacility(BSRF)3B1Abeamline,andgoodresulthasbeenobtained.
简介:Inthispaper,weintroducethereducedmatrixinkqrepresentationandprovidethereducedmatrixelementsofaprojectionoperatorPontherationalnoncommutativeorbifoldT2/Z4.wegivetheclosedformfortheprojectorbyJacobiellipticalfunctions.Sinceprojectorscorrespondtosolitonsolutionsofthefieldtheoryonthenoncommutativeorbifold,wethuspresentacorrespondingsolitonsolution.
简介:Wehavereportedthemassmeasurementsofneutron-deficientnuclides79Y,81;82Zr,83;84Nbinthisyear’sAnnualReport.However,fortheN=ZnuclidesclosetoA=80,theyieldismuchlowerandeveniftheycanbeproduced,thereisstillgreatdifficulttoidentifythembecauseoftheirquitesimilarmass-to-chargeratioandrevolutiontimes.However,theirmassareextremelyimportantforrapidprotoncaptureprocess,forexample,80Zrand84Moarewaitingpointsofrp-process.Theirmassescangreatlyeffectthereactionflowofprotoncaptureonthemandthentheabundanceoftheheaviernuclides.Inaddition,theseparationenergyof84Mo(determinedbythemassof80Zrand84Mo)hasastrongimpactonthe83Nb(p,α)reactionrateandplaysakeyroleintheformationofZr-NbFig.