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简介：TooptimizetheoperationparametersofthebeamlineofNBIonHL-2A,featuresofthebeamline,includingthebeamprofileandthepowerdepositedoncomponentsandinjectedintothetokamakplasma,weremeasured.Theoperationalparametersofthefoursourcesonthebeamlinewereoptimizedwiththemonitorofthebeamprofileandbeampower,andthetransmissionefficiencyoftheNBIinjectedpowerwasthereforeincreased.AbeamdiagnosticsystemforthebeamlineoftheNBIsystemonHL-2Aaswellasthediagnosedresultswasalsopresented.

简介：Synchrontronradiationx-rayreflectivitymeasurementisusedtostudytheconcentrationprofileofaδ-dopedErlayerinSiepitaxialfilmgrownbymolecular-beamepitaxy.Theoscillationofthereflectivityamplitudeasafunctionofreflectionangleisobservedintheexperiment.Bydoingatheoreticalsimulation.theconcentrationprofileofEratomscouldbederied.Itisshownthattheoriginallygrownδ-dopedErlayerchangesintoanexpionentiallydecayedfunctionduetotheErsegregation.Thetemperaturedependenceofthe1/edecaylengthindicatesthatthesegregationisakineticallylimitedprocess.Theactivationenergyisdeterminedtobe0.044±0.005eV.

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简介：Sinteredsiliconcarbide(SiC)wasetchedbyadielectricbarrierdischargesource.Ahighvoltagebipolarpulsewasusedwithheliumgasfortheplasmageneration.OnestablefilamentplasmawasgeneratedandcouldbeusedforSiCetching.Astheprocessinggas(NF3)mixingrateincreased,thewidthanddepthoftheetchingprofilebecamenarroweranddeeper.ThedifferentiatedV-QLissajousmethodwasusedformeasuringthecapacitances(Ceq)oftheelectrodeaftertheplasmaturnedon.ThewidthoftheetchingprofilewasproportionaltoCeq.Asthecurrentpeakvalue/smxofthesubstratecurrentincreased,thevolumeremovalrateofSiCincreased.Theetchdepthwasproportionaltotheratioof/smxtoCeq.Additionally,becauseofthedifferentcharacteristicsoftheplasmadisksonSiCsubstratebythevoltagepolarity,theetchingprofilewasunstable.However,inhighNF3mixingprocess,theetchingprofilebecamestableanddeeper.

简介：WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.

简介：Theq-profilecontrolproblemintheramp-upphaseofplasmadischargesisconsid-eredinthiswork.Themagneticdiffusionpartialdifferentialequation(PDE)modelsthedynamicsofthepoloidalmagneticfluxprofile,whichisusedinthisworktoformulateaPDE-constrainedop-timizationproblemunderaquasi-staticassumption.Theminimumsurfacetheoryandconstrainednumericoptimizationarethenappliedtoachievesuboptimalsolutions.Sincethetransientdy-namicsispre-givenbytheminimumsurfacetheory,thenthismethodcandramaticallyacceleratethesolutionprocess.Inordertoberobustunderexternaluncertaintiesinrealimplementations,PID(proportional-integral-derivative)controllersareusedtoforcetheactuatorstofollowthecomputationalinputtrajectories.Ithasthepotentialtoimplementinreal-timeforlongtimedischargesbycombiningthismethodwiththemagneticequilibriumupdate.