简介:ThemixturemodelofAl85Y4Nd4Ni7alloyinwhichapartiallycrystallizedamorphousalloyisregardedasananocompositeofanAlnanoparticleandaremainingamorphousmatrixispresented.Itsevolutionintheprocessofcrystallizationhasbeeninvestigatedbydifferentialscanningcalorimetry(DSC),X-raydiffraction(XRD),andtransmissionelectronmicroscopy(TEM).Mainlyamorphousstructurewithα-Alnanocrystalsembeddedintheamorphousmatrixhasbeenrevealedbymeltspiningthealloy.Crystallizationisshowedtooccurinthreestages:(1)crystallizationofamorphousalloyandformationofAlNiY,AlNdNiandunknowncrystallinephases,(2)formationofAl3YandAl3Nd,and(3)formationofAl3Ni.
简介:Non-stoichiometriccompoundfluoride-dopedLiFePO4/Ccathodematerialsweresynthesizedviasolid-statereactionusingMgF2andAlF3asdopant.Thefluoride-dopedLiFePO4/CsampleswerecharacterizedbyX-raydiffraction(XRD),scanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM),andelectrochemicaltesting.TheresultsshowthatthematerialsarewellcrystallizedandfluoridedopingcannotchangethespacestructureofLiFePO4.SlightamountsofFe2O3withnofluorideimpuritywere...
简介:Inthiswork,asimpleandfacileone-potoleylaminesolvothermalsyntheticmethodwasdevelopedtosynthesizeCu_2ZnSnS_4(CZTS)nanocrystals.AndtheCu_2ZnSn(S,Se)_4(CZTSSe)thinfilmswerepreparedbyselenizingCZTSnanocrystals.TheobtainedCZTSnanocrystalsandCZTSSefilmswerestudiedusingX-raydiffraction(XRD),transmissionelectronmicroscopy(TEM),scanningelectronmicroscopy(SEM),energy-dispersiveX-rayspectroscopy(EDX),andultraviolet–visiblespectrophotometer(UV–Vis).TEMresultsshowthatthesphere–likeCZTSnanoparticleswithdiameterbetween12and35nmarepolydispersed.XRDstudiesindicatethatthepreparedCZTSnanocrystalsformkesteritecrystalstructure,andtheCZTSSefilmswithkesteritecrystalstructurearealsoobtainedattheannealingtemperaturesof500and550°C.Inparticularafterannealingat500°Cfor20min,theCZTSSefilmexhibitsasmooth,uniform,crack-free,andlarge-grainedtopographyandpossessesCu-poorandSn-richcomposition.Moreover,itshowsstrongopticalabsorptionfromvisibletonear-infrared(IR)region,anditsopticalbandgap(Eg)isfoundtobeabout1.44eV.
简介:ToinvestigatethedegradationofcorrosionresistanceofZircaloy-4inLiOHaqueoussolution,SIMS(secondaryionmassspectrometry)analysiswasperformedtoexaminetheprofilesofLi+,K+,andOH-inoxidelayersformedinthesameconcentration(0.1mol/L)LiOHandKOHsolutions.Eventhoughtheoxidelayershaveanequalthickness,thepenetrationdepthofK+isshallowerthanthatofLi+,andthepenetrationdepthofOH-corrodedinKOHsolutionisalsoshallowerthanthatcorrodedinLiOHsolution.ItshowsthatthediffusionofOH-intooxidelayerisaccompaniedbythecorrespondingcation.ThedifferenceofdegradationeffectofLiOHandKOHsolutionsonthecorrosionresistanceofZircaloy-4wasdiscussed.
简介:在H2SO4-Fe2(SO4)3体系中研究载金黄铁矿的浸出动力学,探讨反应温度、Fe3+浓度、硫酸浓度、搅拌速度等对黄铁矿浸出的影响规律。结果表明:在H2SO4-Fe2(SO4)3体系中,在30~75°C下黄铁矿浸出过程主要受化学反应控制Fe3+浓度与黄铁矿的浸出呈正相关,通过Arrhenius经验公式求得浸出表观活化能为51.39kJ/mol。EDS与XPS分析结果表明:黄铁矿氧化过程中硫的氧化经一系列中间形态,最终被氧化成硫酸根,并伴有部分元素硫生成,符合硫代硫酸根氧化路径机理。
简介:研究析出强化AW-6016-T4金属板材的低温成形行为。利用拉伸和Nakazima测试方法获得材料在-196至25°C范围内的流变曲线和成形极限曲线。结果表明,材料的强度和伸长率随温度的降低而增大。背散射电子衍射(EBSD)研究表明变形材料在室温和低温下显微组织有细微区别。但连续加热差热分析表明析出动力学之间无明显区别。本研究结果表明低温变形可用于制造8mm深的B柱,而常温变形只能制造6mm深的B柱。
简介:SiC/Si<潜水艇class=“a-plus-plus”>3N<潜水艇class=“a-plus-plus”>4合成是用自我繁殖的高温度的燃烧合成-Si3N<潜水艇class=“a-plus-plus”>4粉末和适当数量原文如此搽粉。两个都,sintering添加剂,系统被使用,它是YAN(Y2O3艾尔2O3AlN)并且YN(Y2O3AlN)。影响在SiC/Si的sintering行为上原文如此满意<潜水艇class=“a-plus-plus”>3N<潜水艇class=“a-plus-plus”>4合成被调查。结果证明有二个sintering添加剂系统的样品的密度,收缩,弯曲力量,坚硬,和破裂坚韧随内容的增加增加第一原文如此然后甚至当原文如此内容不断地增加时,减少。样品的重量损失的趋势是相反的。有最好的机械性质的样品原文如此满意在二个系统是不同的。为YAN系统,当原文如此内容到达10时,样品的最好的机械性质被获得?%,当至于YN系统它是5时?%。YN样品的性质比YAN样品优异。J阶段(2Y2O3吠敨爠畯整漠?灡汰楹杮氠睯瀠敲獳牵?景???慐漠?桴?獡搭獩牰灯牯楴湯瑡摥朠敲湥挠浯慰瑣搠牵湩?桴?敤潳灲楴湯爠'啼礃A慮楴湯瀠潲散獳椠?楳畴栠瑯搠晥牯慭楴湯椠??灳牡?汰獡慭猠湩整楲杮?偓?猠獹整?慣?扯慴湩挠浯汰瑥汥?敲潣扭湩摥丠??洠条敮?楷桴朠潯?湡獩瑯潲祰愠摮洠条敮楴?牰灯牥楴獥?桔?慭楸畭?慭湧瑥捩瀠潲数瑲敩??????汣獡?愢瀭畬?汰獵?慭?猯'T?????鮪徬鞪??极脿???醰鑛??鴿鎘銳????�
简介:第十节粘结片的储存与叠书2.回流线(接2014年第2期)2.2半自动回流线与手动生产线半自动回流线叠书(叠BOOK)时,粘结片料叠及铜箔是由人工操作送入叠BOOK台。不锈钢板、托板、盖板的移送仍然由移板机操作。采用半自动回流线虽然可以降低投资强度,但劳动强度比全自动回流线要大许多,产品外观质量的保证也比自动线差了好多。半自动回流线生产中必须把好下面几个工艺关口。2.2.1铜箔的裁切半自动回流线的铜箔裁切在另一个地方单独进行,环境净化度通常在10000级。铜箔裁切机可以切单卷,也可以同时切两卷。切两卷是通常让两张铜箔背背相对(即铜箔光面相对),这样可以防止在叠BOOK过程胶粉污染到铜箔的光面,这种铜箔切机最薄只能切到18μm铜箔。