简介:Thisresearchreportsthepreparationandcharacterizationofcoppernanoparticlesmodifiedbydidecylbenzenesulfonate(DBS),TheCunanoparticles'sizewasdeterminedtobe40nmbytransmissionelectronmicroscope(TEM).TheX-rayphotoelectronspectrometry(XPS)resultsshowthatthereareinteractionsbetweenthecoppernanoparticlesandDBSfunctiongroup.Thenonlinearopticalpropertieswerestudiedbythefour-wavemixingmethod.Thevalueofx^(3)/α0wasfoundtobe6.9×10^-11esucm.
简介:Energydepositionofintensepulsedionbeam(IPIB)ontheTitargetbasedonthe2DmodelofIPIBdensityhasbeensimulatedbytheMonteCarlo(MC)method.Takingthedepositedenergyasthethermalsource,wehaveestablishedtheablationmodelofthetargetandcalculatedthespatialandtemporalevolutionoftheablationshapeoftheTitargetirradiatedbyIPIBwithdifferentenergydensities.WehavealsoestablishedtheejectionmodelofthehydrodynamicequationsrelatedtotheablationshapeofthetargetbyusingtheablationresultsastheinitialconditionsofplasmaformedbyIPIBirradiation.Thespatiallyandtemporallyevolutedprofilesoftheplasmapressureandmassdensityarecalculated.
简介:Thepedestalcharacteristicisanimportantbasisforhighconfinementmode(Hmode)research.BecauseofthefinitespatialresolutionofThomsonscattering(TS)diagnosticonExperimentalAdvancedSuperconductingTokamak(EAST),itisnecessarytocharacterizethepedestalwithasuitablefunctionalform.BasedonsimulatedandexperimentaldataofEAST,itisshownthatthetwo-linemethodwithabilinearfittinghasbetterreproducibilityofpedestalparametersthanhyperbolictangent(tanh)andmodifiedhyperbolictangent(mtanh)methods.ThismethodhasbeenappliedtoEASTtypeIedgelocalizedmode(ELM)discharges,andtheelectronpedestaldensityisfoundtobeproportionaltotheline-averageddensityandtheedgepressuregradientisfoundtobeproportionaltothepedestalpressure.Furthermore,theionpoloidalgyro-radiushasbeenidentifiedasthesuitableparametertodescribethepedestalpressurewidth.
简介:Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.
简介:Thekillinglogarithmsindexinkillingavegetativeforminanexplosureofabout90sandasporeinanexplosureofabout120s,byusingalow-temperatureplasmaproducedbydielectricbarrierdischarge(DBD),reached5.Thespeedinkillingthestrainstested,byusingalow-temperatureplasma,wasthehighestwithE.Coli,thenS.AureusandB.Subtilisvarnigerspore.Theresultsofthescanningelectronmicroscopeshowedthatthelow-temperatureplasmadestroyedtheouterstructureofthebacteriaandthatthevegetativeformwasmoresusceptibletotheinactivationeffectofthelow-temperatureplasmathanwasthespore.Thisindicatedthattheeffectsofthehighvoltageandhighvelocityparticleflow,inplasma,penetratingthroughtheouterstructureofthebacteriamightplayadominantroleduringtheinactivationofthebacteria.
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