简介:与浸透的土壤存款的由一条半球的冲积山谷的三维的散布和飞机P波浪的衍射的一个分析解决方案被采用Fourier-Bessel系列扩大技术开发。不同于以前的研究,浸透的土壤存款与单相的有弹性的理论在被模仿,在这篇论文,他们为浸透的多孔的媒介,和一半与Biot的动态理论被模仿空间作为asingle阶段被假定橡皮媒介。更少的频率,发生角度ofP波浪和土壤的孔在半球的冲积山谷的表面排水量放大上扔的尺寸的效果被调查。数字结果证明一条浸透的半球的冲积山谷的存在在表面排水量放大上有许多影响。当与发生ofP波浪评估一条半球的冲积山谷的排水量回答时,与Biot的动态理论模仿土壤存款是更合理的。
简介:InthispaperweestablishsharpH¨olderestimatesofharmonicfunctionsonaclassofconnectedpostcriticallyfinite(p.c.f.)self-similarsets,andshowthatfunctionsinthedomainofLaplacianenjoythesameproperty.Somewell-knownexamples,suchastheSierpinskigasket,theunitinterval,thelevel3Sierpinskigasket,thehexagasket,the3-dimensionalSierpinskigasket,andtheVicseksetarealsoconsidered.
简介:Theoreticalmodelsofstellarevolutionpredictnegligiblequantitiesof6Li,9Be,and11Binthehydrogenburningphasesofastar’sevolution[1].TheprimordialBig-Bangnucleosynthesis(BBN)modelmightbemoregenerousinitsproductionoftheseelements[2].Theradiative-capturecrosssectionforprotoncaptureon11Bleadingto12CissmallatastrophysicallyinterestingenergiesbecauseofthelargeCoulombbarrier.
简介:Let0<p≤1andwintheMuckenhouptclassA1.Recently,byusingtheweightedatomicdecompositionandmolecularcharacterization,Lee,LinandYang[11]es-tablishedthattheRiesztransformsRj,j=1,2,···,n,areboundedonHwp(Rn).InthisnoteweextendthistothegeneralcaseofweightwintheMuckenhouptclassA∞throughmolec-ularcharacterization.Onedifficulty,whichhasnotbeentakencarein[11],consistsinpassingfromatomstoallfunctionsinHwp(Rn).Furthermore,theHwp-boundednessofθ-Calderón-Zygmundoperatorsarealsogiventhroughmolecularcharacterizationandatomicdecomposition.
简介:Polymerizable离子的液体共聚物PMMA-co-BVIm-Br被激进的聚合技术综合,并且由Fourier变换描绘了红外线的spectrometryFTIR,<啜class=“a-plus-plus”>1H原子磁性的回声<啜class=“a-plus-plus”>1H-NMR和胶化浸透层析GPC。产生共聚物被用来经由一个阶段倒置方法准备polyvinylidene氟化物PVDF混合膜。多型性,表面wettability和混合膜的希腊语的第六个字母潜力上的共聚物的效果被ATR-FTIR,接触角度仪器和希腊语的第六个字母潜力分析器调查。扫描电子显微镜学SEM和SEMedition也被使用调查形态学和制作的膜的表面元素变化。结果显示那PMMA-co-BVIm-Br共聚物在让混合膜在试验性的pH范围期间有积极表面的膜的表面上存在。共聚物也赞成在PVDF膜的水晶阶段的形成。接触角度实验显示那PMMA-co-BVIm-Br共聚物能交换混合膜的wettability从对吸水由交换Br恐水病<啜class=“a-plus-plus”>有PF的阴离子<潜水艇class=“a-plus-plus”>6<啜class=“a-plus-plus”>。与纯PVDF膜相比,混合膜的水流动和水恢复流动显然被提高。从流动恢复比率FR和全部的犯规比率R的结果<潜水艇class=“a-plus-plus”>t都建议混合膜有好犯规反的性质。
简介:Fivechiralstationaryphases(CSPs)wereusedtoseparatetheenantiomersofaseriesofO,O-diethyl(p-methyl-benzenesulfonamindo)-aryl(alkyl)-methylphosphonates.Achiralrecognitionmechanismwaspresentedtoexplaintheresolutionofthesecompounds.ResultsshowthatCSPwithstrongπ-acceptor3,5-dinitrobenzoylgroupandhighsterichindrancehasthebestresolutionabilityinchiralseparationofO,O-diethyi(p-methyl-benzenesulfonamindo)-aryl(alkyl)-methylphosphonates.WhenaCSPhasjustastrongπ-acceptor3,5-dinitrobenzoylorhighsterichindranceitdoesnothavegoodchiralresolutionability.ThechiralrecognitionismoredifficultwhentheCSPhasmorethanoneasymmetriccenter.
简介:Theseparationofenantiomersofaseriesofeighteennovelnitrogenmustardlinkedphosphoryldiamidederivativeswasinvestigatedonthepreparedphenylcarbamatederivativeβ-cy-clodextrinbondedphaseinnormal-phaseHPLC.Someoftheenantiomerscouldbeseparatedinbaseline.Thechiralrecognitionmechanismwasalsosuggestedfortheseparationofchiralphosphorusorganiccompounds.
简介:TheeffectsofSO2,SO3ondenovosynthesisofpolychlorinateddibenzo-p-dioxins(PCDDs)anddibenzofurans(PCDFs)werestudiedusingmodelflyashesincorporatingcopperoxideandactivatedcarbon.ItwasfoundthattheinhibitiveeffectofSO2onPCDD/FsformationissimilartothatofSO3.Toinvestigatetheinhibitionmechanism,CuSO4formationsfrombothCuOandCuCl2wereexamined.TheabilityofSO3toconvertCuCl2andCuOonasilicasupportintosulfateismuchstrongerthanthatofSO2.However,replacingsilicabyactivatedcarbonleadstoamuchhighconversionofCuCl2toCuSO4inthepresenceofSO2.ThepromotionbyactivatedcarbonisexplainedbythereductionofCuCl2toCu2Cl2andtheeventualconversionofCu2Cl2intoCuSO4isthemaininhibitionmechanismofSO2ondenovosynthesisofPCDD/Fs.
简介:WereportonN-dopedp-typeZnOfilmswiththec-axisparalleltothesubstrate.ZnOfilmswerepreparedonana-Al2O3(0001)substratebysolid-sourcechemicalvapourdeposition(CVD),Zn(CH3COO)2.2H2OwasusedastheprecursorandCH3COONH4asthenitrogensource.Thegrowthtemperaturewasvariedfrom300℃to600℃,theas-grownZnOfilmdepositedat500℃showedp-typeconductionwithitsresistivityof42Ωcm,carrierdensity3.7×10^17cm^-3andHallmobility1.26cm^2V^-1.s^-1atroomtemperature,whicharethebestpropertiesforp-typeZnOdepositedbyCVD.Thep-typeZnOfilmpossessesatransmittanceofabout85%inthevisibleregionandabandgapof3.21eVatroomtemperature.