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简介：Inthisstudy,weinvestigatetheinfluenceofdopingonthechargetransferanddevicecharacteristicsparametersinthebulkheterojunctionsolarcellsbasedonpoly(3-hexylthiophene)(P3HT)andamethanofuUerenederivative(PCBM).Organicsemiconductorsarealsoknowntobenotpureandtheyhavedefectsandimpurities,someofthemarebeingchargedandactasp-typeorn-typedopants.Calculationsofthesolarcellcharacteristicsparametersversusthep-dopinglevelhavebeendoneatthreedifferentn-dopings(N_d)thatconsistof5×10~(17)cm~(-3),10~(18)cm~(-3),and5×10~(18)cm~(-3).Weperformtheanalysisofthedopingconcentrationthroughthedrift-diffusionmodel,andcalculatethecurrentandvoltagedopingdependency.Wefindthatatthreedifferentn-dopantlevels,optimump-typedopingisaboutN_p=6×10~(18)cm~(-3).Simulationresultshaveshownthatbyincreasingdopinglevel,V_(oc)monotonicallyincreasesbydoping.CellefficiencyreachesitsmaximumatsomewhathigherdopingasFFhasitspeakatN_p=3×10~(18)cm~(-3).Moreover,thispaperdemonstratesthattheoptimumvalueforthep-dopingisaboutN_p=6×10~(18)cm~(-3)andoptimumvalueforn-dopantisN_d=10~(18)cm~(-3),respectively.Thesimulatedresultsconfirmthatdopingconsiderablyaffectstheperformanceoforganicsolarcells.

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简介：目的：研究P波斜入射下的地基动应力路径,探讨其影响因素和可能变化范围,为进一步研究斜入射地震波作用下场地动力响应奠定理论基础。创新点：1.从数学上证明斜入射P波在任一深度的地基中形成的应力路径在剪应力分量（偏差正应力-水平剪应力）组成的平面中为一个斜椭圆;2.分析了P波入射角、土体泊松比和单位波长深度对斜椭圆应力路径形状与大小的影响。方法：1.基于半无限弹性空间的地震波传播理论,考虑地震波在自由界面的反射,推导土体中任一深度处由P波斜入射产生的动应力,并表示成由剪应力分量组成的平面下的应力路径（公式（9））及该应力路径的特征参数表达式（公式（A12）~（A14））;2.通过控制变量法,分析参数敏感性（图7、9、10和12）。结论：1.虽然证实P波斜入射引起的应力路径为斜椭圆形式,但在地基深度、入射波频率和波速的特定组合下,斜椭圆仍可从斜线一直变化到圆形,形式较为多样化;2.P波斜入射角度在30？~60？时引起的动偏应力幅最大,最大可达同等条件下其它入射角产生的动应力幅的2倍以上;3.斜入射角大于45？后,斜椭圆路径形状几乎不随入射角改变,在研究范围内以竖直扁椭圆形为主;4.土体饱和度大于70%时,泊松比的变化对土体斜椭圆路径形状影响不大,但动应力幅随泊松比增大而显著降低。

简介：在chiralp波浪超导体的impurity-field-induced和magnetic-field-inducedquasiparticle状态被自我一致地解决Bogoliubov-deGennes方程理论上调查。在强壮的散布限制，我们发现到杂质的通用州的界限能为单个无磁性的杂质和单个磁性的杂质被导致。而且，我们发现不同chiral命令参数和相应超电流在线性杂质附近有一致分布。状态的本地密度的计算面对一个外部磁场证明在旋涡核心的零精力的Majorana模式的紧张山峰能被调节外部磁场的力量或配对相互作用戏剧性地提高。

简介：Anovelstructureisproposedfordoublingtheverticalbreakdownvoltageofsilicon-on-insulator(SOI)devices.Inthisnewstructure,theconventionalburiedoxide(BOX)inanSOIdeviceissplitintotwosections:thesource-sectionBOXandthedrain-sectionBOX.Ahighly-dopedSilayer,referredtoasanon-depletionpotential-clampedlayer(NPCL),ispositionedunderandclosetothetwoBOXsections.InthesplitBOXesandtheSiregionabovetheBOXes,theblockingvoltage(BV)isdividedintotwopartsbytheNPCL.ThevoltageintheNPCLisclampedtobenearlyhalfofthedrainvoltage.Whenthedrainvoltageapproachesabreakdownvalue,thevoltagesustainedbythesource-sectionBOXandtheSiregionunderthesourcearenearlythesameasthevoltagesustainedbythedrain-sectionBOXandtheSiregionunderthedrain.TheverticalBVisthereforealmostdoubled.TheeffectivenessofthisnewstructurewasverifiedforaP-channelSOIlateraldouble-diffusedmetal-oxidesemiconductor(LDMOS)andcanbeappliedtootherhigh-voltageSOIdevices.ThesimulationresultsshowthattheBVinanNPCLP-channelSOILDMOSisimprovedby55%andthespecificon-resistance(Ron,sp)isreducedby69%incomparisontotheconventionalstructure.

简介：我们学习配对的状态在一大部分在旋转起来和旋转下面费米子分别地被充满到s-和px-orbital乐队的地方，二部件的费密气体在一个各向异性的二维的光格子装载了的imbalanced。我们由于s和pxorbitals的乐队结构的相对倒置显示出那，在一样上在二费米子之间配对的系统帮助Brillouin地区站在一起，与有限center-of-mass动量为状态导致大稳定的政体，即，Fulde-Ferrell-Larkin-Ovchinnikov(FFLO)状态。特别地，二费密什么时候出现，在动量空间是靠近的，嵌套的效果与空间调整稳定-FFLO阶段的一种特殊类型沿着容易掘的x方向。我们在二维的飞机以内为各种各样的方面比率在吝啬地的途径以内畴划零温度的阶段图并且计算Berezinskii-Kosterlitz-Thouless(BKT)转变温度T为不同阶段的BKT。

简介：Accordingtothegoodchargetransportingpropertyofperovskite,wedesignandsimulateap–i–n-typeall-perovskitesolarcellbyusingone-dimensionaldevicesimulator.Theperovskitechargetransportinglayersandtheperovskiteabsorberconstitutetheall-perovskitecell.Bymodulatingthecellparameters,suchaslayerthicknessvalues,dopingconcentrationsandenergybandsofn-,i-,andp-typeperovskitelayers,theall-perovskitesolarcellobtainsahighpowerconversionefficiencyof25.84%.Thebandmatchedcellshowsappreciablyimprovedperformancewithwidenabsorptionspectrumandloweredrecombinationrate,soweobtainahighJ_(sc)of32.47mA/cm~2.Thesmallseriesresistanceoftheall-perovskitesolarcellalsobenefitsthehighJ_(sc).Thesimulationprovidesanovelthoughtofdesigningperovskitesolarcellswithsimpleproducingprocess,lowproductioncostandhighefficientstructuretosolvetheenergyproblem.

简介：近似所有人的癌症表演正常TP53基因表示的一半但是MDM2或MDMX的异常overexpression。这个事实建议有希望的癌症在指向在p53和MDM2/MDMX之间的相互作用的治疗学的策略。为了帮助，实现开发有效禁止者破坏p53-MDM2/MDMX相互作用的目标，我们系统地调查了结构并且有它和从用随机的分子的动力学模拟的一个原子论的观点的MDM2和MDMX的相互作用的禁止者的p53的相互作用特征。我们发现在MDM2和MDMX玩的结构的某特定的helices在他们的绑定给角色调音到禁止者，并且氢契约在MDM2或MDMX与它的对应物由p53的Trp23残余形成了，这在vivo从MDM2-p53建筑群决定MDM2-p53相互作用的混乱和p53的代替的动态比赛过程。结果在这报导纸被期望为设计功能的禁止者并且认识到癌症基因治疗的新策略提供基本信息。

简介：Inthispaper,normalincidenceverticalp-i-nphotodetectorsonagermanium-on-insulator(GOI)platformweredemonstrated.Theverticalp-i-nstructurewasrealizedbyion-implantingboronandarsenicatthebottomandtopoftheGelayer,respectively,duringtheGOIfabrication.Abruptdopingprofileswereverifiedinthetransferredhigh-qualityGelayer.Thephotodetectorsexhibitadarkcurrentdensityof~47mA∕cm~2at-1Vandanopticalresponsivityof0.39A/Wat1550nm,whichareimprovedcomparedwithstate-of-the-artdemonstratedGOIphotodetectors.Aninternalquantumefficiencyof~97%indicatesexcellentcarriercollectionefficiencyofthedevice.Thephotodetectorswithmesadiameterof60μmexhibita3dBbandwidthof~1GHz,whichagreeswellwiththeoreticalcalculations.Thebandwidthisexpectedtoimproveto~32GHzwithmesadiameterof10μm.ThisworkcouldbesimilarlyextendedtoGOIplatformswithotherintermediatelayersandpotentiallyenrichthefunctionaldiversityofGOIfornear-infraredsensingandcommunicationintegratedwithGeCMOSandmid-infraredphotonics.

简介：Theefficiencyofthepoly（3-hexylthiophene）（P3HT）and[6,6]-phenylC61-butyricacidmethylester(PC61BM)basedorganicsolarcellswasenhancedbyusing1,2,4-trichlorobenzene（TCB）asaprocessingadditivetocontroltheblendmorphology.TheadditionofTCBimprovedthearrangementofP3HTwhichresultedingoodphaseseparatedblendfilms.Correspondingly,theoptimizedsolarcellsshowedapowerconversionefficiency（PCE）of4.17%withafillfactor（FF）of0.69,whichwerehigherthanthoseofcommonthermalannealingdevices（PCE3.84%,FF0.67）.Theefficiencywasfurtherimprovedto4.74%bythermalannealingat150°Cfor10minwithahigherFFof0.74.