简介:Photoluminescenceevaluationofpandntype6H-SiCsampleshasbeendone.Resultsshowthatatlowtemperaturethephotoluminescenceof6H-SiCisclearlydominatedbydonor-acceptorpairtransitions,insomecase,free-to-donortransitioncouldbeobservedathighertemperature.Thethermalquenchingprocessesofthephotoluminescencehavebeeninvestigatedtodeterminethepossibleionizationnenergiesoftheimpurities.
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简介:AseriesofMo-impregnatedHβsamples,withMoO3loadinginHβzeoliteinthemassfractionrangeof0.5%-6.0%,werestudiedbymeansofXRDandIRinordertocharacterizetheirstructures.Mo/Hβsampies'crystallinityalmostlinearlydecreaseswithincreasingtheamountofMoO3loaded,TheIRspectraandXRDpatternssuggestthattheprogressivedestabilizationoftheHβzeolitestructureiscausedbyincreasingMoloadingin(MoO3+Hβzeolite).Duringthecalcination,Al2(MoO4)3formedfromthedealuminationofHβzeolite,causesthesubstantiallypartialbreakdownofthezeoliteframeworkwhentheMoloadinginMoO3+Hβisrelativelyhigh.
简介:Theholeinjection,theradiativerecombinationandthedevicelumi-nescentefficienciesofamorphoussiliconcarbidethinfilmp-I-njunctionlightemit-tingdiodesarequantitativelycalculated,andtheeffectofthecarrier(especiallythehole)injectionandrecombinationprocessesonthedeviceluminescentcharacteris-ticsarerevealed.Withoutconsideringthedevicejunctiontemperature,itisroundthatthedeviceluminescentefficiencymainlydependsontheholeinjectionefficiencyatlowfieldandtheholeradiativerecombinationefficiencyathighfieldrespective-ly.Thetheoreticalanalysesareinwellagreementwiththeexperimentalresults.