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简介:TheExperimentalAdvanced.SuperconductingTokamak(EAST)isbeingbuiltinChinatoachievehighpowerandlongpulseoperationforstudiesofreactor-relevantissuesundersteady-stateconditions.AmajorconcernforEASTisthepowerhandlingcapabilityofthedivertortargetplates,whichisacriticalissueforfuturehigh-poweredsteady-statetokamaks,suchasITER.DetailedmodelingusingB2/EIRENEcodepackageandthemostrecentchemicalsputteringdatashowsthatthepresenceofstrongchemicalsputteringatthemainchamberwallleadstostrongcarbonradiationintheperipheryoftheconfinedplasma,significantlyreducingtheheatfluxestothetargetplatesandfacilitatingplasmadetachmentatalowerdensitydesiredforlowerhybridcurrentdriveinEAST,withonlyaslightincreaseinZ_(eff)attheedge.Thetargetheatloadcanbefurtherreducedbyoperatingwithadouble-nulldivertorconfiguration,whichalsoleadstoasignificantreductionintheedgeZ_(eff).However,thecodepredictsthatthedouble-nulloperationwouldresultinastrongdivertorasymmetryintargetpowerloading,favoringtheoutsidetargets.
简介:Significantelectromagneticpulses(EMP)canbegeneratedbytheintensivelaserirradiatingsolidtargetsininertialconfinementfusion(ICF).ToevaluatetheEMPintensityanddistributioninandoutsidethelaserchamber,wedesignedandfabricatedadisconeantennawithultra-widebandsofover10GHz.Thereturnloss(S11parameter)ofthisantennawasbelow-10dBandcouldevenachieveunder-30dBat3.1GHz.TheEMPintensityinthisstudyat80cmand40cmawayfromthetargetchambercenter(TCC)reached400kV/mand2000kV/m.ThecurrentresultsareexpectedtoofferpreliminaryinformationtostudyphysicsregardinglaserplasmainteractionsandwillalsolayexperimentalfoundationforEMIshieldingdesigntoprotectvariousdiagnostics.
简介:Interactionbetweenhigh-intensitypulsedionbeam(HIPIB)andadouble-layertargetwithtitaniumfilmontopofaluminumsubstratewassimulated.Thetwo-dimensionalnonlinearthermalconductionequations,withthedepositedenergyinthetargettakenassourceterm,werederivedandsolvedbyfinitedifferentialmethod.Asaresult,thetwo-dimensionalspatialandtemporalevolutionprofilesoftemperaturewereobtainedforatitanium/aluminumdouble-layertargetirradiatedbyapulseofHIPIB.Theeffectsofionbeamcurrentdensityonthephasestateofthetargetmaterialsnearthefilmandsubstrateinterfacewereanalyzed.BothtitaniumandaluminumweremeltedneartheinterfaceaRerashotwhentheionbeamcurrentdensityfellintherangeof100A/cm~2to200A/cm~2.