Er^3+-dopedSrBi4Ti4O15-Bi4Ti3O12(SBT-BIT-xEr^3+,x=0.00,0.05,0.10,0.15and0.20)inter-growthceramicsweresynthesizedbythesolid-statereactionmethod.Structural,electricalandup-conversionpropertiesofSBT-BIT-xEr^3+wereinvestigated.Allsamplesshowedasinglephaseoftheorthorhombicstructure.RamanspectroscopyindicatedthattheEr^3+substitutionforBi^3+atAsitesofthepseudo-perovskitelayerincreasesthelatticedistortionofSBT-BIT-xEr^3+ceramics.ThesubstitutionofBi^3+byEr^3+leadstoadecreaseofdielectriclosstanδandanincreaseofconductivityactivationenergy.Piezoelectricconstantd33wasslightlyimproved,butdielectricconstantwasdecreasedwiththeEr^3+doping.TheSBT-BIT-xEr^3+ceramicwithx=0.15exhibitstheoptimizedelectricalbehavior(d33~17pC/N,tanδ~0.83%).Moreover,twobrightgreen(532and548nm)andonered(670nm)emissionbandswereobservedunderthe980nmexcitation.Optimizedemissionintensitywasalsoobtainedwhenx=0.15fortheSBT-BIT-xEr^3+ceramic.Therefore,thiskindofceramicsoughttobepromisingcandidatesformultifunctionaloptoelectronicapplications.
