简介:<正>英飞凌科技股份公司推出全新的650VCoolMOSTMC6/E6高性能功率MOSFET系列。该产品系列将现代超级结(SJ)器件的优势(如低导通电阻和低容性开关损耗)与轻松控制的开关行为及体二极管高牢固性融合在一起。基于同样的技术平台,C6器件针对易用性进行了优化,而E6器件则旨在提供最高效MOSFET系列。该产品系列将现代超级结(SJ)器件的优势(如低导通电阻和低容性开关损耗)与轻松控制的开关行为及体二极管高牢固性融合在一起。基于同样的技术平台,C6器件针对易用性进行了优化,而E6器件则旨在提供最高效率。CoolMOSTMC6/E6是来自英飞凌的第六代市场领先的高压超级结功率MOSFET。全新的650VCoolMOSTMC6/E6器件具备快速、可控的开关性能,适用于效率和功率密度是关键要求的应用。650VCoolMOSTMC6/E6器件易于应用,是各种高能效开关产品的理想之选,例如笔记本电脑适配器、太阳能逆变器和其他需要额外击穿电压裕量的开关电源(SMPS)产品。相对于CoolMOSTMC3650V系列,全新650VCoolMOSTMC6/E6器件输出电容(Eoss)的储电量降幅高达20%,而C6/E6器件经过改进的体二极管具备更高的硬换相耐受性,并可使反向恢复电荷降低约25%。得益于调谐栅极电阻的平衡设计,C6/E6器件的开关行为能够避免过高的电压和电流变化率。邹勉摘编
简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.
简介:AlinearizationattackontheKeyStreamGenerator(KSG)ofthemodifiedE0algorithmproposedbyHermelin[ProceedingsofICISC'99,SpringerLNCS1787,2000,17-29]isgiveninthispaper.TheinitialvaluecanberecoveredbyalinearizationattackwithO(260.52)operationsbysolvingaSystemofLinearEquations(SLE)withatmost220.538unknowns.FrederikArmknecht[CryptologyePrintArchive,2002/191]proposedalinearizationattackontheKSGofE0algorithmwith0(270.341)operationsbysolvinganSLEwithatmost224.056unknowns,sothemodificationproposedbyHermelinreducestheabilityofE0toresistthelinearizationattackbycomparingwiththeresultsofFrederikAnnknecht.
简介:Atomicityisnecessaryforreliableandsecureelectroniccommercetransactionandtoguaranteetheparticipants'interests.Anatomicandefficiente-cash(electroniccash)transactionprotocolbasedontheclassicale-cashschemeispresented.Thedeliveryofdigitalgoodsisincorporatedintotheprocessofpaymentintheprotocol.Apartfromensuringallthreelevelsofatomicity,thenovelprotocolfeatureshighefficiencyandpracticabilitywithunfavorablestrongassumptionremoved.Furthermore,theproposedprotocolprovidesnon-repudiationproofsforanyfuturedisputes.Atlast,analysisoftheatomicityandefficiencyisillustrated.
简介:TheanalysisofsolarcellperformancehasbeendonebysimulatingtheexternalI-Vcharacteristicsofn^+/p/p^+singlecrystalsiliconsolarcellunderhighlightintensityand1.5airmass(AM).Thismethodallowsthemaximizationofsolarcellefficiency.Tofabricatelow-costn^+/p/p^+singlecrystalsiliconsolarcells,solidsourceofdopedphosphorousandboronwasused.