简介：Alooplessgraphonnverticesinwhichverticesareconnectedatleastbyaandatmostbybedgesiscalleda(a,b,n)-graph.A(b,b,n)-graphiscalled(b,n)-graphandisdenotedbyKbn(itisacompletegraph),itscomplementbyKbn.Anonincreasingsequencep=(d1,…,dn)ofnonnegativeintegersissaidtobe(a,b,n)graphicifitisrealizablebyan(a,b,n)-graph.Wesayasimplegraphicsequencep=(d1,…,dn)ispotentiallyK4—K2[K2-graphicifithasaarealizationcontaininganK4—K2[K2asasubgraphwhereK4isacompletegraphonfourverticesandK2[K2isasetofindependentedges.Inthispaper,wefindthesmallestdegreesumsuchthateveryn-termgraphicalsequencecontainsK4—K2[K2assubgraph.

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简介：采用水热法合成了诺氟沙星金属配合物[Cu(C16H18N3FO3)2(C14H8O5)(H2O)3],并应用X-射线单晶衍射技术对其结构进行测定,确定了其几何构型,探讨了金属离子与药物分子的配位方式.采用琼脂扩散法对比4种常见细菌对药物的敏感性,结果表明合成的金属配合物具有一定的抑菌作用.

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简介：InallthearticlesinActaMechanicaSolidaSinica,Volume31,Issues1-4thecopyrightisincorrectlydisplayedas"TheChineseSocietyofTheoreticalandAppliedMechanicsandTechnology"whereitshouldbe"TheChineseSocietyofTheoreticalandAppliedMechanics".

简介：Wehavedesignedandrealizedanathermal4-channelwavelength（de-）multiplexerinsiliconnitride（SIN）.Minimizedthermalsensitivityisachievedinawidewavelengthrangebyusingwideandnarrowwaveguideswithlowanddifferentthermal-opticcoefficientsinthetwoarmsofMach-Zehnderinterferometers（MZIs）.TheSiNcorelayerandSiO2claddinglayersaredepositedbyalow-temperatureplasma-enhancedchemicalvapordep-ositionprocess.ThefabricatedMZIfilterexhibitsathermalsensitivitywithin4-2.0pm/℃inawavelengthrangeof55nmtonear1300nm.Then,anathermal（de-）multiplexerbasedoncascadedMZIshasbeendemonstratedwithacrosstalk〈-22dBandathermalsensitivity〈4.8pm/℃forallfourchannels,reducedby77%comparedtoaconventionalSiN（de-）multiplexer.OwingtothepassiveoperationandcompatibilitywiththeCMOSback-endprocess,ourdeviceshavepotentialapplicationsin3Dintegrationofphotonicsandelectronics.

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简介：Inthiswork,SMAT(surfacemechanicalattritiontreatment)wasperformedonTi6Al4V.PlasmanitridingoftheSMATedsampleswasinvestigatedincomparisonwithcoarse-grainedsamples.Thesampleswerecharacterizedusingopticmicroscope,SEM,TEMandVickersmicrohardnesstester.TheresultsshowedthatasignificantlythickercompoundlayerwithhigherhardnesswasobtainedfortheSMATedsampleswhencomparedwithun-SMATedsamplesafternitriding.CorrosionresistanceofTi6Al4VinaRinger’ssolutionwasstudiedbyelectrochemicaltechniquesincludingopencircuitpotentialmeasurement,potentiodynamicpolarizationandEIS(electrochemicalimpedancespectroscopy).Overall,ourresultsidentifiedthebeneficialimpactsoftheduplexSMAT/nitridingtreatmentoncorrosionbehaviourofTi6Al4V.Weartestswerealsoperformedonaball-on-disctribometerwherethetreatedsampleswererubbedagainsta6mmdiameteraluminaballunderanormalloadof5NusingRinger’ssolutionaslubricantmedia.ThefrictioncoefficientoftheSMATedandnitridedsampleswasreducedcomparedtotheuntreatedsamples.WearratesdemonstratedthatSMATcombinedwithnitridingimprovedwearresistanceofTi6Al4Valloy.

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简介：实验选取与抗炎免疫密切相关的磷酸二酯酶4为靶点,应用超滤液质联用技术和酶体外活性抑制实验筛选并鉴定了葛根中抑制磷酸二酯酶4活性成分.实验结果表明葛根提取物具有抑制磷酸二酯酶4的作用,IC50值为0.04g/L.葛根素抑制磷酸二酯酶4作用最强,其次为大豆苷和大豆苷元,IC50值分别为52.79,71.54和122.17μmol/L.超滤液质联用实验筛选结果与体外活性实验一致.3′-羟基葛根素和3′-甲氧基葛根素在2个实验中均没有抑制磷酸二酯酶4的作用.

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简介：ThenovelverticallystandingPtSe2filmontransparentquartzwaspreparedbyselenizationofplatinumfilmdepositedbythemagnetronsputteringmethod,andanNd：LuVO4passivelymode-lockedsolid-statelaserwasrealizedbyusingthefabricatedPtSe2filmasasaturableabsorber.TheX-raydiffractionpatternandRamanspectrumofthefilmindicateitsgoodcrystallinitywithalayeredstructure.ThethicknessofPtSe2filmismeasuredtobe24nmaccordingtothecross-sectionheightprofileoftheatomicforcemicroscopeimage.High-resolutiontransmissionelectronmicroscopyimagesclearlydemonstrateitsverticallystandingstructurewithaninterlayerdistanceof0.54nmalongthec-axisdirection.Themodulationdepth（AT）andsaturationfluence（Фs）ofPtSe2filmaremeasuredtobe12.6%and17.1μJ/cm2,respectively.Theobtainedmode-lockedlaserspectrumhasacentralwavelengthof1066.573nm,witha3dBbandwidthof0.106nm.Thetransformlimitedpulsewidthofthemode-lockedlaserwascalculatedtobe15.8ps.Amaximumaverageoutputpowerof180mWwithaworkingrepetitionrateof61.3MHzisobtained.Tothebestofourknowledge,thisisthefirstreportofthegenerationofultrafastmode-lockedlaserpulsesbyusinglayeredPtSe2asasaturableabsorber.

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