简介:利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明:当衬底温度超过200K,乙烯即发生脱氢反应,σCH和σCC能级均向高结合能方向移动。在室温下,σCH和σCC能级位置与乙炔在Ru(1010)表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温,Ru(1010)表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010)表面以分子状态稳定吸附。在有K的Ru(1010)表面上,室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。
简介:Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.
简介:Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.
简介:研究KTiOAsO4晶体的生长缺陷,对于改善它的性能和应用前景,有很大的意义。本文利用化学腐蚀光学显微术和同步辐射X射线形貌术研究了KTiOAsO4晶体的缺陷,实验结果表明,两种腐蚀剂对于显示KTA晶体的表面缺陷效果显著,KTA晶体中主要的缺陷有铁电畴、生长层、扇形界、位错和包裹物。讨论了这些缺陷形成的原因。
简介:Thedeviceofacetyleneproductionbyhydrogen(H-)plasmapyrolysiscoalisexaminedanddevelopednotonlyforstudyingtheapplicationoflowtemperatureplasmabutalsoforstudyingthecleanuseofcoal.Thepower-supplycontrolsystemisusedtoensuresupplyingasteadyenergytogenerateandmaintaintheplasmaelectricarcofthedevice.Thehardwareconfigurationandthesoftwaredesignofthesystemaredescribedinthispaper.Verifiedbyexperiments,thissystemcanmeettherequirementsofreal-timeperformance,reliabilityandextensibilityforthedevice.
简介:LiNdP4O12(LNP)晶体是一种新型的激光材料。本文报道了用同步辐射X射线白光形貌术和光学显微法研究由助熔剂籽晶旋转法生长的LNP晶体的生长缺陷,观察到了圆形生长台阶及精细的系列台阶结构,对晶体中的包裹物和位错缺陷等进行了详细的观察描述,还发现了一种比较奇特的腐蚀沟槽,分析了这种腐蚀沟槽的形成机理及各种缺陷的成因和克服办法。
简介:报道了用同步辐射X射线白光形貌术和光学显微法研究由助熔剂籽晶旋转法生长的LNP晶体的生长缺陷。本文除对晶体中的包裹物和位错缺陷等进行了详细观察描述外,还发现了一种比较奇特的腐蚀沟槽。最后分析了这些缺陷的成因和克服办法。
简介:Alowpoweratmosphericpressureplasmajetdrivenbya24kHzACpowersourceandoperatedwithaCH4/airgasmixturehasbeeninvestigatedbyopticalemissionspectrometer.Theplasmaparametersincludingtheelectronexcitationtemperature,vibrationaltemperatureandrotationaltemperatureoftheplasmajetatdifferentdischargepowersarediagnosedbasedontheassumptionthatthekineticenergyofthespeciesobeystheBoltzmanndistribution.TheelectrondensityatdifferentpowerisalsoinvestigatedbyHβStarkbroadening.Theresultsshowthattheplasmasourceworksundernon-equilibriumconditions.Itisalsofoundthatthevibrationaltemperatureandrotationaltemperatureincreasewithdischargepower,whereastheelectronexcitationtemperatureseemstohaveadownwardtrend.Theelectrondensityincreasesfrom0.8×1021m-3to1.1×1021m-3whenthedischargepowerincreasesfrom53Wto94W.
简介:Insituwhite-beamsynchrotronradiationtopographicobservationsunderanelectricfieldhavebeenmadeontheKTiOPO4(KTP)familyofcrystals.Theinvestigationshowsastrongenhancementofdiffractedintensityforhklreflections(l≠0)andtopographiccontrastintheformoffinestriationswhentheexternalelectricfieldisparalleltothepolaraxis.Severalkkindsofdopedandundopedsampleswithvariousgrown-indefects,suchasdomainboundaries.growthstriations,growth-sectorboundaries.dislocations.etc.,havebeenstudiedindetail.Theresultssuggestthatthesedefectshaveverylittleeffectonthefield-inducedstriations,ItisbelievedthatthemovementofK^+ionsdrivenbytheelectricfieldleadstoalocalaccumulationofchargesandalatticedistortion.Thestronlyanisotropicconductivityisagoverningfactorintheexplanationofthefield-relatedphenomenainthiskindofquasi-one-dimensionalconductor.
简介:ThispaperpresentsabriefoverviewofCO2reformingofCH4(CRM)byvariousformsof'arc'plasma,whichismoresuitabletoCRM,andtheenergyefficiencyisusedtoevaluatedifferentplasmaprocessesspecifically.Accordingtothereportedresults,thearcthermalplasmawithbinodeexhibitedbetterperformance.Moreover,theplasmaCRMprocesswascomparedwiththereportedplasmasteamreformingofCH4(SRM)process,andtheresultsshowedthattheformerprocesshasadvantagesonenergyefficiencyandCH4consumption.Additionally,itisbelievedthattheplasmaCRMprocesswouldbecompetitivewiththeconventionalSRMprocessinbothenergyefficiencyandCO2emissiononcetheheatmanagementisemphasizedandtherenewablepowerisused.Finally,aconceptofplasmareactorforindustrialapplicationisproposed.