简介：量监禁效果在nanoelectronics和光电子应用是重要的；然而，在量监禁的理论之间有差异，它显示拓宽的乐队差距仅仅在在大直径的nanowires(NW)拓宽的乐队差距的小尺寸，和试验性的观察发生。这份报纸在紫外可见的吸收系列报导吸收边的明显的蓝移动原文如此有50-300nm的直径的NW。根据量监禁，理论和高分辨率的传播电子显微镜学想象原文如此NW，拓宽在的乐队差距原文如此，有多达几百纳米的直径的NW充分被解释；结果能帮助解释与大直径在另外的NW拓宽的类似的乐队差距。

简介：微管道（MP）一直是SiC晶体中的主要缺陷。其它的结构缺陷有：位错，堆垛层错和本征点缺陷及其与杂质所形成的复合体。除高质量晶体外，具有平滑的、无缺陷表面的衬底对于生长出器件级高质量外延层也很关键。晶片加工过程中可能在衬底表面上感生出缺陷（例如划痕或亚表面损伤），它们对随后所生长的外延层及所制器件都有很不利的影响。

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简介：SiC以其具有高绝缘击穿电场强度的特性,非常适宜于功率半导体器件应用。本文系统阐述了SiC功率芯片及SiC功率模块的产品化开发动向。

简介：以葡萄糖和硅溶胶混合溶液为前驱体,采用碳热还原法在多孔SiC陶瓷表面生长SiC纳米线膜层,制备纳米复合陶瓷膜.使用X射线衍射、光学显微镜、扫描电镜、孔径分析仪等对样品的物相、形貌和孔径特征进行了分析.结果表明,在1 450 ℃反应6 h,微米孔径SiC的表面生长出了分布比较均匀的SiC纳米线膜层,纳米复合陶瓷膜具有窄分布的亚微米孔径.

简介：LowcostsiliconcarbonnanometerpowderwassynthesizedbycarbothermalreductionmethodwithnanometerSiO2andcarbonasrawmaterial.Itssynthesisthermodynamicswerediscussed.TheinfluenceofLaonTG-DSCcurvewasalsoanalyzed.ItindicatedthatthesynthesisprocessofSiCpowderhadtwosteps.InthefirststeptwomedialproductionsofSiOgandCOgformed,andinthesecondstep,β-SiCwasfinallysynthesized.After0.3%Laadded,atthefirststep,theinitiatoryformingtemperatureofproducingSiO(g)andCO(g)declinedfrom1351.4to1250.9℃,andthethermalactivationenergydecreasedfrom223.6to34.7J·g-1;atthesecondsteptheinitiatoryformingtemperatureofsynthesizingβ-SiCpowderdeclinedfrom1526.5to1357.8℃,andthethermalactivationenergydecreasedfrom693.7to295.7J·g-1.WithoutLaadded,thebestsynthesistechnologyforβ-SiCpowderwas1550℃for120min,averagepowderdiameterwasbiggerabout150nm.WithLaadded,thebestsynthesistechnologywas1500℃for120min,averagepowderdiameterwasabout100nm.

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简介：利用CVI法,在两种不同类型的国产SiC纤维束中引入(PyC/SiC)4或(PyC/SiC)8多层界面,并进一步致密化,制备含不同纤维种类和界面类型的SiCf/SiCMini复合材料。研究纤维种类和界面类型对SiCf/SiCMini复合材料力学性能和断裂机制的影响。结果表明:致密化的SiCf/SiCMini复合材料已形成一个整体,在纤维和基体连接处可观察到明显的界面层,且界面厚度均匀;A/(PyC/SiC)4/SiC、B/(PyC/SiC)4/SiC、A/(PyC/SiC)8/SiC三种SiCf/SiCMini复合材料的最大拉伸强度分别达到466,350和330MPa,最终拉伸应变分别达到0.519%,0.219%和0.330%;拉伸断口均有纤维拔出,且随纤维种类或界面类型不同,纤维拔出长度和断口形貌有所差异。其中A/(PyC/SiC)4/SiC以ModelⅡ断裂机制发生断裂,B/(PyC/SiC)4/SiC和A/(PyC/SiC)8/SiC以ModelⅠ断裂机制发生断裂。

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简介：SiC（碳化趟材料作为第三代半导体材料，具有高结温、高临界击穿电压、高热导率等特点，因此，SiC材料有利于实现功率模块的小型化并提高功率模块的高温性能。基于此，同时为了实现模块的自主可控化，将Si模块中的Si二极管用自主SiC二极管进行替代，制作SiC混合功率模块。主要介绍混合功率模块封装工艺的关键工序：回流、铝线键合、点胶、灌胶。

简介：SiCwhiskerswith'rosarybead'morphologyweresynthesizedusingsuitablesiliconsourceandcarbonsourcethroughsolidreactionatthetemperatureabove1537K.ThediameterandlengthoftheSiCwhiskerswereabout0.1-1.0μmand20-100μm,respectively.Thelargestdiameteroftheirenlargedendsofthewhiskerswasabout0.2-1.0μm,anditgraduallyandsmoothlydecreasedtothesizeoftheplainpartofthewhiskers.TheresultsofX-raydiffractionanalysisshowthatthecrystallinestructureoftheobtainedSiCwhiskersisβ-SiC.ItisconsideredthattheSiCwhiskersgrowviaavapor-solidmechanism.

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简介：TheCW-CO2laserdrivengasreactionwasappliedtopreparenano-sizedSiCpowder,SiH4andC2H4ofhighpurties,asstartingmaterials,weremixedtacertainrationandintroducedintotheresactioncell.Thegasesflewacrossthelaserbeamorthogonallyandthuswereheatedbylaserbeam.Thenano-sizedSiCultrafinepowderwswereformedthroughthermicgasreation.Thefinalproductivityofthisprocesswas97%,Theobtainedpowderswerecharacterizedandanalyzed.ChemicalanalysisrevealedthattheSiCcontentwas95.38wt%,Oxygen,theprimaryimpurity,weighted1.32%whiletraceimpurities,suchascalcium,magnesiumandothermetals,wereonly0.03%,XRD,XPSandTEMindicatedthatthpowderparticleswerenearlysphericalandnotagglomerated.Theparticlesizerangedfrom10nmto25nmwithanaverageof15nm,Theparticlestredtobenoncrystalline.

简介：摘要：碳化硅（SiC）作为一种重要的半导体材料，具有优异的物理性能和热稳定性，因此在功率电子器件、光电器件等领域具有广泛的应用。然而，SiC晶体中存在多种类型的点缺陷，如杂质原子、空位、晶格位错等，这些点缺陷对SiC材料的电学和光学性能产生重要影响。本论文主要综述了近年来SiC点缺陷研究的进展，包括点缺陷的形成机制、电学性质、光学性质以及对器件性能的影响等方面，旨在为SiC材料研究和应用提供参考。

简介：交流UPS的主要功能，是为电力系统中的各种变配电设备、监控用计算机等提供高质量的不间断电源。本文重点介绍了常时逆变器供电方式的UPS电路结构，并将电路中功率模块内的半导体元件全部置换成SiC半导体元件。全SiC功率模块用于SiC-UPS时，电力变换损耗约减小30％，轻载时的运转效率达到90％以上，而且可靠性高。

简介：CurrentlytheservicelifeofCDQshaftsinChinaismainlyrestrictedbythepropertiesoftheinclinedfluebricks.Inthiswork,basedonthesystematicanalysisofthedamagemechanismofinclinedfluerefractories,highperformancemullite-SiCbricksweredeveloped.Thebrickswereproducedbycorundum,andalusite,SiCandotherhighpurityrawmaterials.Metalsiliconandaluminaultramicropowderwereaddedtoformdispersionmulti-phasestructure,fortifyingthematrixandimprovingthemicrostructure.Theproductshaveexcellentpropertiessuchaslowporosity,highdensity,goodwearresistance,highrefractorinessunderload,andgoodthermalshockresistance.Theproductscanreplacetheordinarymullite-SiCbricksandobtainagoodservicelife.

简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.

简介：ASiC/2024compositewasmadebysemisolidcasting.ThewettingbetweenSiCandAlmatrixisimprovedbytreatingSiCparticlesatahightemperature,coatingK2ZrF6,andaddingMgtotheAlmelt,AneffectivewaytoremovethegasaroundSiCparticleswasalsofound.Microstructureswereobservedunderopticalmicroscope(OM)andscanningelectronmicroscopy(SEM).TheresultsshowthatSiCparticlesandAlmatrixarewellbondedandnogapsorcavitiesaroundtheparticlesareobserved.SiCparticlesdistributehomogeneouslyintheAlmatrix.TheexistenceofSiCparticlesresultsintheincreaseofwearresistanceandstrength.