简介:Lowpoweraddercircuits,SERF,10T-Ⅰ,10T-Ⅱ,10T-Ⅲandacomplementaryadder(28T)atphysicallayoutlevelareevaluated.Simulationsbasedontheextractedaddercircuitlayoutsareruntoassesshowvariouscircuitsetupscanimpactthespeedandpowerconsumption.Inaddition,impactsofoutputinvertersonthecircuitperformanceofmodifiedSERFand10Taddersduetothresholdlossproblemarealsoexamined.Differencesamongtheseaddersareaddressedandapplicationsoftheseaddersaresuggested.
简介:Thispaperoptimizestheburiedchannelcharge-coupleddevice(BCCD)structurefabricatedbycomplementarymetaloxidesemiconductor(CMOS)technology.TheoptimizedBCCDhasadvantagesoflownoise,highintegrationandhighimagequality.Thechargetransferprocessshowsthatinterfacetraps,weakfringingfieldsandpotentialwellbetweenadjacentgatesallcausethedecreaseofchargetransferefficiency(CTE).CTEandwellcapacityaresimulatedwithdifferentoperatingvoltagesandgapsizes.CTEcanachieve99.999%andthewellcapacityreachesupto25000electronsforthegapsizeof130nmandthemaximumoperatingvoltageof3V.
简介:ToovercomethelimitationoflowimagesignalswingrangeandlongresettimeinfourtransistorCMOSactivepixelimagesensor,achargepumpcircuitispresentedtoimprovethepixelresetperformance.Thechargepumpcircuitconsistsoftwostageswitchcapacitorserialvoltagedoubler.Cross-coupledMOSFETswitchstructurewithwellcloseandopenperformanceisusedinthesecondstageofthechargepump.Thepixelresettransistorwithgatevoltagedrivenbyoutputofthepumpworksinlinearregion,whichcanaccelerateresetprocessandcompleteresetisachieved.Thesimulationresultsshowthatoutputofthechargepumpisenhancedfrom1.2to4.2Vwithvoltageripplelowerthan6mV.Thepixelresettimeisreducedto1.14nsindark.Imagesmearduetonon-completelyresetiseliminatedandtheimagesignalswingrangeisenlarged.ThechargepumpissuccessfullyembeddedinaCMOSimagesensorchipwith0.3×106pixels.