简介:Lowpoweraddercircuits,SERF,10T-Ⅰ,10T-Ⅱ,10T-Ⅲandacomplementaryadder(28T)atphysicallayoutlevelareevaluated.Simulationsbasedontheextractedaddercircuitlayoutsareruntoassesshowvariouscircuitsetupscanimpactthespeedandpowerconsumption.Inaddition,impactsofoutputinvertersonthecircuitperformanceofmodifiedSERFand10Taddersduetothresholdlossproblemarealsoexamined.Differencesamongtheseaddersareaddressedandapplicationsoftheseaddersaresuggested.
简介:Byapplyingswitch-signaltheory,thetheoryoftransmissioncurrent-switchesbasedonsymmetricternarylogicisproposed,thistheoryissuitabletodesignsymmetricternarycurrent-modeCMOScircuits.Thesymmetricternarycurrent-modeCMOScircuitsdesignedbyusingthistheorynotonlyhavesimplercircuitstructuresandcorrectlogicfunctions,butalsocanprocessbidirectionalsignals.
简介:A320×240CMOSimagesensorisdemonstrated,whichisimplementedbyastandard0.6μm2P2MCMOSprocess.Forreducingthechiparea,each2×2-pixelblocksharesasample/holdcircuit,analog-to-digitalconverterand1-bmemory.The2×2pixelpitchhasanareaof40μm×40μmandthefillfactorisabout16%.Whileoperatingatalowframerate,thesensordissipatesaverylowpowerbypower-managementcircuitmakingpixel-levelcomparatorsinanidlestate.Adigitalcorrelateddoublesampling,whicheliminatesfixedpatternnoise,improvesSNRofthesensor,andmultiplesamplingoperationsmakethesensorhaveawidedynamicrange.
简介:Theprincipleofthetwocarrierscontributingtocarrythepixelsignalchargesisfirstlypresented,andthenthebipolarjunctionphotogatetransistor(BJPT)withhighperformanceisproposedfortheCMOSimagesensor.Thenumericalanalyticalmodelofthephoto-chargetransferforthebipolarjunctionphotogateisestablishedindetail.Somenumericalsimulationsareobtainedunder0.6μmCMOSprocess,whichshowthatitsreadoutrateincreasesexponentiallywiththeincreaseofthephoto-chargeatappliedvoltage.