简介:Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.
简介:Inthispaper,buildingtogrid(B2G)andvehicletogrid(V2G)havebeendefinedwithclearandpracticalunderstanding.Bothofthemarenewgenerationtechnologieswhicharetheessentialpartofsmartcitylivingandcrowdenergyclustering.Firstly,anin-detailedoverviewhasbeenprovidedwithanintroductiontoB2GandV2Gfollowedbyahistoricaloverviewandtheoreticalanalysisinrespecttosmartcityplanning.Next,areviewisconductedoncurrentandprevioussmartlivingresearch,whichdealswithB2GandV2G.EfficientB2GandV2Gimplementationsinpracticalcasesthenhavebeendiscussed.Lastly,bothofthesetechnicalprospectshavebeenanalyzedincrowdenergydiagram.
简介:Aprocesssuitableforproductiononalargescaleofcoldlightmirrorforfilmprojectorisintroduced.DepositionparametersrequiredforproducingTiO2/SiO2opticalmultialyersystemsbyelectronbeamevaporationofTiO2andSiO2startingmaterialsareinvestigated.Manufactureandtechniquesofcoldmirrorandtheadhesion,stability,wearandcorrosionresistanceofcoldmirrorbythisprocessarediscussed.Theresultshowsthatcoldmirrorproducedhasgoodopticalpropertiesandbetteradhesion.