简介:使用RF-PECVD法分别在基底温度为60℃、120℃和200℃的N型单晶锗表面制备了α-C:H膜,采用拉曼光谱、傅里叶变换红外吸收光谱和原子力显微镜等技术手段研究分析了α-C:H膜的价键组成及表面形貌,讨论了基底温度对α-C:H膜微结构及部分性能的影响。结果表明,在α-C:H膜沉积过程中,基底温度对膜层微观结构有较大影响,基底温度60℃时,膜层表面光滑、致密无石墨化现象。随着基底温度的升高,α-C:H膜中含H量和微晶石墨量逐渐增多,α-C:H膜层性能也逐步退化。
简介:Wereportonthecontinuous-wave(CW)andpassiveQ-switchingperformanceofaminiatureYb:Y3Ga5O12crystallaserendpumpedbya935-nmdiodelaser.AmaximumCWoutputpowerof12.03Wisproducedwithanoptical-to-opticalefficiencyof54.4%,whiletheslopeefficiencyis63%.InthepassivelyQ-switchedoperationachievedwithaCr4+:YAGsaturableabsorber,anaverageoutputpowerof2.12Wat1025.2nmisgeneratedwithaslopeefficiencyof46%atapulserepetitionrateof5.0kHz.Thepulse’senergy,duration,andpeakpowerare424μJ,2.3ns,and184.3kW,respectively.
简介:ByusingPDM-OFDM-16QAMmodulation,all-Ramanamplification,coherentdetection,and7%forwarderrorcorrection(FEC)threshold,wesuccessfullydemonstrate63-Tb/s(368×183.3-Gb/s)signalover160-kmstandardsinglemodefiber(SSMF)transmissionintheC-andL-bandswith25-GHzchannelspacing.368opticalchannelswithbandwidthspacingof25GHzaregeneratedfrom16externalcavitylasersources.After160-kmSSMFtransmission,alltestedbiterrorrate(BER)areunder3.8×10-3,whichcanberecoveredby7%FECthreshold.Withineachchannel,weachievethespectralefficiencyof6.85bit/s/HzinC/Lband.
简介:Adiode-end-pumpedelectro-optic(EO)Q-switchedNd:YVO4laseroperatingatrepetitionrateof10kpps(pulsespersecond)wasreported.AblockofLa3Ga5SiO14(LGS)singlecrystalwasusedasaQ-switchandthedriverwasametaloxidesemiconductorfieldeffecttransistor(MOS-FET)pulserofhighrepetitionrateandhighvoltage.Atcontinuouswave(CW)operation,theslopeefficiencyofthelaserwas46%,andmaximumoptical-to-opticalefficiencywas38.5%.Usinganoutputcouplerwithtransmissionof70%,a10-kppsQ-switchedpulsetrainwith0.4-mJmonopulseenergyand8.2-nspulsewidthwasachieved,theopticalconversionefficiencywasaround15%,andthebeamqualityM2factorwaslessthan1.2.