简介:Superluminescencediode(SLD)moduleswithwidespectrumcharacteristicsarerequiredinfibergyroscopes.A1.3μmbutterflypackagedsuperluminescencediodewiththespectrumwidthover30nmisreportedandrecentadvancesinprocessofSLDisdescribedinthepaper.TheSLDmoduleshavebeenappliedtofibergyroscopes.
简介:Self-organizedIn0.5Ga0.5As/GaAsquantumislandstructureemittingat1.35μmatroomtemperaturehasbeensuccessfullyfabricatedbymolecularbeamepitaxy(MBE)viacycled(InAs)1/(GaAs)1monolayerdepositionmethod.Photoluminescence(PL)measurementshowsthatverynarrowPLlinewidthof19.2meVat300Khasbeenreachedforthefirsttime,indicatingeffectivesuppressionofinhomogeneousbroadeningofopticalemissionfromtheIn0.5Ga0.5Asislandsstructure.Ourresultsprovideimportantinformationforoptimizingtheepitaxialstructuresof1.3μmwavelengthquantumdot(QD)devices.
简介:Anexperimentalwaytoanalyzethethermalcharacteriztionofsemiconductorlasersbasedonspectroscopymethodunderpulsedrivingconditionshasbeendeveloped,Byusingthiswaythethermalcharacteristicssofstraincompensated1.3μmInAsP/InGaAsPridgewaveguideMQWlaserdiodeshavebeeninvestigated.Resultsshovwthatbymeasuringandanalyzingthelasingspectraunderappropriatedrivingparametersandtemperatureranges,thethermalresistanceofthelaserdiodescouldbededucedeasily,Ahigerthermalresistanceof640K/Whasbeenmeasuredonanarrowridgelaserchipwithoutsoldering.Otherthermalandspectralpropertiesofthelaserhavealsobeenmeasuredanddiscussed.
简介:AnexperimentalwayforthethermalcharacterizationofsemiconductorlasersbasedonI-Vmethodunderpulsedrivingconditionshasbeendeveloped,withwhichthethermalcharacteristicsofstraincompensated1.3μmInAsP/InGaAsPridgewaveguideMQWlaserchipshavebeeninvestigated.Theresultsshowthat,bymeasuringandanalyzingtheI-Vcharacteristicsunderappropriatepulsedrivingconditionsatdifferentheatsinktemperatures,thethermalresistanceofthelaserdiodescouldbeeasilydeduced.Thedrivingcurrentandjunctionvoltagewaveformsofthelaserchipsunderdifferentpulsedrivingconditionsarealsodiscussed.