简介:Duringthepastyear,biophysicsgroupatInstituteofModernPhysics(IMP)obtainedlotsofachievementsintheresearchofheavy-ionmutationbreedingandproductionchainofsweetsorghum.Infundamentalresearchfield,amutantpopulationofArabidopsisthalianainducedbycarbonionbeamradiationwasestablishedinM2generation.Thetotalmutationratewas4.77%.Amutantmarked197#,whichhadfrostbite-like,palegreen,wrinkledandunevenleavesanddisplayedloosebractsandlatematuration,wasobtainedandreportedforthefirsttime.Generoughmappingresultsdemonstratedthatthereweretwomutationsitesinthe1stand4thchromosomeof197#mutant,indicatingheavyionradiationmightinducemorecomplicatedmutationsbeyondourcurrentrecognition.Thewholegenomeresequencingofthismutantisstillinprogress.Inaddition,high-yieldstrainsofmicrobeswhichhavepotentialvalueforcommercialapplication,suchasCorynebacteriumglutamicumandLacbobacillusthermophiles,werescreenedusingheavy-ionmutationtechnique.
简介:Duetotheiruniqueadvantagesinphysicsandbiology,heavyionbeams,withhighmutationrateandwidemutationspectrum,havebeenwidelyusedinplantbreedingasanovelandefficientphysicalmutagen.Inthiswork,Arabidopsisthaliana(197#),whichdisplayeddecreasedfertility,wasinducedbycarbonionbeamsacceleratedbytheHeavyIonResearchFacilityinLanzhou(HIRFL).InordertodeterminethediscrepanciesbetweenWTandmutantplants,aseriesofdevelopmentindexeswereanalyzedduringthereproductivegrowthstage.
简介:Recently,bismuthsulfide(Bi2S3)hasattractedmuchattentioninthethermoelectriccommunityowingtoitsabundance,lowcost,andadvancedproperties.However,itspoorelectricaltransportpropertieshavepreventedBi2S3devicesfromrealizinghighthermoelectricperformance.Inthiswork,ourmotivationistodecreasethelargeelectricalresistivity,whichisrecognizedastheoriginofthelowZTvalueinundopedBi2S3.Wecombinedmeltingandsparkplasmasintering(SPS)inacontinuousfabricationprocesstoproduceBi2S3–xSex(x=0,0.09,0.15,0.21)andBi2S2.85–ySe0.15Cly(y=0.0015,0.0045,0.0075,0.015,0.03)samples.OurresultsshowthatSealloyingatSsitescannarrowthebandgapandactivateintrinsicelectronconduction,leadingtoahighpowerfactorof~2.0μW·cm–1·K–2atroomtemperatureinBi2S2.85S0.15,about100timeshigherthanthatofundopedBi2S3.Moreover,ourfurtherintroductionofClatomsintotheSsitesresultedinasecond-stageoptimizationofcarrierconcentrationandsimultaneouslyreducedthelatticethermalconductivity,whichcontributedtoahighZTvalueof~0.6at723KforBi2S2.835Se0.15Cl0.015.OurresultsindicatethathighthermoelectricperformancecouldberealizedinBi2S3withearth-abundantandlow-costelements.
简介:Wehavestudiedthetwo-andthree-photonabsorption(2PAand3PA)propertiesofMn-dopedCsPbCl3twodimensionalnanoplatelets(2DNPs)andcubicnanocrystals.Comparedwiththeircubiccounterparts,theMn-doped2DNPsexhibitstrongerquantumconfinementeffectsthatcanmoreefficientlyenhancetheirdopantcarrierexchangeinteractionsandmultiphotonabsorption.Morespecifically,themaximumvolume-normalized2PAand3PAcrosssectionsofthe2DNPswere6.8and7.2timesgreaterthanthoseoftheircubiccounterparts,respectively,reachingupto1237GM∕nm3inthevisiblelightbandand2.24×10-78cm6·s2·photon-2∕nm3inthesecondbiologicalwindow,respectively.
简介:在模拟球面元件曲率半径的仿面形夹具上镀制了AlF3单层薄膜,并对不同口径位置上的薄膜进行了比较,以表征球面元件表面镀制薄膜的光学特性和微观结构。首先,采用紫外可见光分光光度计测量了不同口径位置上薄膜样品的透射和反射光谱,反演得出AlF3的折射率和消光系数。然后,使用原子力显微镜观察了样品的表面形貌和表面粗糙度。最后,使用X射线衍射仪对薄膜的内部结构进行了表征。实验结果表明:在球面不同位置镀制的AlF3单层薄膜样品的光学损耗随着所在位置口径的增大而增大。口径为280mm处的消光系数是中心位置处消光系数的1.8倍,表面粗糙度是中心位置的17.7倍。因此,球面元件需要考虑由蒸汽入射角不同带来的光学损耗的差异。
简介:Synthesis,structureandmagneticpropertiesofRudopedperovskitestructuredmanganiteLa0.5Sr0.5MnO3wereinvestigatedexperimentally.Ahydrothermalmethodwasusedforthepreparationofthesamples.Ahigh-temperatureannealingprocesswasalsoemployedtomakeacomparison.AslightlyenhancementoftheunitcellvolumewasobservedwiththeincreaseofRuconcentration.Scanningelectronmicroscopyshowsthatthematerialsaremadeupofcube-shapedparticleswithdimensionofseveralmicrometers.Importantly,itisfoundthatboththeCurietemperatureTCandsaturationmomentcanbereducedbyRudoping.ThevalueofcoercivefieldisnotaffectedbytheintroductionofRu.
简介:AnapplicatiopnoftheopticalpyrometerisstudiedformeasuringmonochromaticemissivitiesofcementclinkerwithvariousFe2O3contnet.Theidsaofusing“brightnesstemperature”isintroducedintotheeimssivitymeasurement.Inthismethod,thereisnoneedformeasuringanactualtemperatureofsamplesurfaces,onlywithdeterminingbothbrightnesstemperaturesofasampleandablackbodycantherequiredemissivitybeevaluatedaccordingtoWien'sradiationlaw.Inpractice,thecementclinkerisregardedasagreybody,themonochromaticemissivityisapproximatelyequaltothetotalemissivity,soasingle-colouropticalpyrometerisappliedforthispurpose,Testmeasurementsarecarriedouton10kindsofcementclinkers,Experimentaldataaretreatedbytheleastsquaremethod.Asaresult,theemissivityvariationwithtemperatureatacertainFe2O3contentisquitewellrepresentedbyεn=a+bT.Furthermore,thisworkfirstreportedthattheeimissivitiesofcementclinkerchangeconsierablywithFe2O3contents.Inmultiplecementproductionthisconclusionisveryimportant.
简介:WepresentseveralcomparisonsofGEANT4simulationswithtestbeamdataandGEANT3simulationsfordifferentliquidargon(LAr)calorimetersoftheATLASdetector,Allrelevantpartsofthetestbeamsetup(scintilators,multiwireproportionalchambers,cryostatetc.)aredescribedinGEANT4aswellasinGEANT3.MuonandelectrondataatdifferentenergieshavebeencomparedwithMonteCarloprediction.
简介:针对DC/DC的质子位移效应,选取具有抗TID能力的DC/DC器件作为试验样品,在3MeV质子辐照条件下获取了器件的失效位移损伤剂量.结果表明,DC/DC功能失效是PWM控制器输出异常导致的.通过等效^60Coγ辐照及退火试验,排除了TID效应的影响,确定器件功能失效是由位移损伤引起的.高温退火后器件功能恢复,并立即对该器件进行了测试.结果表明,输出电压、电压调整度、负载调整度、交叉调整度、纹波及负载跃变时的输出电压均大幅衰退.利用这些敏感参数,获取了位移损伤导致的电源性能衰退模式.根据位移损伤缺陷类型及退火温度,分析了DC/DC的退火规律,可为DC/DC质子辐射损伤模拟试验方法的建立及其空间应用提供依据.
简介:Thegreenlong-after-glowluminescencefromTb3+-dopedSr2SiO4phosphors,whicharesynthesizedbythehightemperaturesolidstatereactioninareductiveatmosphere,isobservedinthispaper.Theresultsshowthatunderultravioletexcitation,theobtainedphosphorsproduceanintensegreen-lighting-emissionfromtheTb3+,andthegreen-lightinglongafter-glowluminescencerelatedtoTb3+canlasthalfanhouraftertheirradiationsourcehasbeenremoved.Moreover,theeffectsofco-dopingLi+,Dy3+,Er3+,Gd3+,andYb3+withTb3+onthedecaypropertiesandthermoluminescencepropertiesareinvestigatedtoconfirmthelong-after-glowmechanism.
简介:PlanarringresonatorwaveguidesarefabricatedinthinfilmsofAs2S3chalcogenideglass,depositedonsilicaon-siliconsubstrates.WaveguidecoresaredirectlywrittenbyscanningthefocusedilluminationofafemtosecondTi:sapphirelaseratacentralwavelengthof810nm,throughatwo-photonphoto-darkeningprocess.Alargephotoinducedindexchangeof0.3–0.4refractiveindexunitsisobtained.Theradiusoftheringresonatoris1.9mm,correspondingtoatransmissionfreespectralrangeof9.1GHz.Ahighloaded(intrinsic)Qvalueof110,000(180,000)isachieved.Thethermaldependenceoftheresonatortransferfunctionischaracterized.Theresultsprovidethefirstreport,tothebestofourknowledge,ofdirectlywrittenhigh-Qringresonatorsinchalcogenideglassfilms,anddemonstratethepotentialofthissimpletechniquetowardsthefabricationofplanarlightguidecircuitsinthesematerials.